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US 7,804,082 B2Granted
Phase change memory system
AssigneeIntel Corporation
InventorCharles H. Dennison
Life of this patent
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Abstract
A thin film phase change memory may be provided with a layer which changes between amorphous and crystalline states. The threshold voltage of that layer may be increased in a variety of fashions. As a result of the threshold increase, it is possible to transition cells, initially fabricated in the set or low resistance state, into the reset or high resistance state. In one advantageous embodiment, after such initialization and programming, the threshold voltage increase is eliminated so that the cells operate thereafter without the added threshold voltage.
Claims8
A system comprising:
- a processor;
- and
- a phase change memory including a pair of spaced electrodes, a phase change material between said electrodes and a second material between said electrodes that increases the threshold voltage of said phase change material, said second material in direct face to face contact with said phase change material, wherein said second material is a chalcogenide.
A system comprising:
- a processor;
- and
- a phase change memory including a pair of spaced electrodes, a phase change material between said electrodes and a second material between said electrodes that increases the threshold voltage of said phase change material, the region between said electrodes being free of intervening electrodes, wherein said second material is a chalcogenide.
Dependencies are inferred from the claim text.