Methods of depositing epitaxial thermoelectric films having reduced crack and/or surface defect densities and related devices
AssigneeNextreme Thermal Solutions, Inc.
InventorsJonathan Pierce, Robert P. Vaudo
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Abstract
A substrate is provided including a growth surface that is offcut relative to a plane defined by a crystallographic orientation of the substrate at an offcut angle of about 5 degrees to about 45 degrees. A thermoelectric film is epitaxially grown on the growth surface. A crystallographic orientation of the thermoelectric film may be tilted about 5 degrees to about 30 degrees relative to the growth surface. The growth surface of the substrate may also be patterned to define a plurality of mesas protruding therefrom prior to epitaxial growth of the thermoelectric film. Related methods and thermoelectric devices are also discussed.
Claims42
A method of fabricating a thermoelectric device, the method comprising:
- providing a substrate including a growth surface that is offcut relative to a plane defined by a crystallographic orientation of the substrate at an offcut angle in a range of about 10 degrees to about 45 degrees;
- and then
- epitaxially growing a thermoelectric film on the growth surface,
- wherein the thermoelectric film comprises a compound comprising bismuth (Bi), antimony (Sb), lead (Pb), tellurium (Te), and/or selenium (Se), and
- wherein the substrate comprises gallium arsenide (GaAs), silicon (Si), barium fluoride (BaF), silicon carbide (SiC), gallium nitride (GaN), aluminum nitride (AlN), sapphire, and/or glass.
A method of fabricating a thermoelectric device, the method comprising:
- patterning a substrate to define a growth surface having a plurality of mesas protruding therefrom that is offcut relative to a plane defined by a crystallographic orientation of the substrate at an offcut angle in a range of about 10 degrees to about 45 degrees;
- and then
- epitaxially growing a thermoelectric film on the growth surface,
- wherein the thermoelectric film comprises a compound comprising bismuth (Bi), antimony (Sb), lead (Pb), tellurium (Te), and/or selenium (Se), and
- wherein the substrate comprises gallium arsenide (GaAs), silicon (Si), barium fluoride (BaF), silicon carbide (SiC), gallium nitride (GaN), aluminum nitride (AlN), sapphire, and/or glass.
A thermoelectric device, comprising:
- a thermoelectric element comprising a thermoelectric film having a crystallographic orientation that is tilted at an angle in a range of about 10 degrees to about 30 degrees relative to a surface of the thermoelectric film,
- wherein the thermoelectric film comprises a compound comprising bismuth (Bi), antimony (Sb), lead (Pb), tellurium (Te), and/or selenium (Se).
A thermoelectric film, comprising:
- a thermoelectric material layer having a thickness of less than about 100 micrometers (μm) and a crack density of less than about 1 crack per millimeter (mm) and having a crystallographic orientation that is tilted at an angle in a range of about 10 degrees to about 30 degrees relative to a surface of the thermoelectric film,
- wherein the thermoelectric film comprises a compound comprising bismuth (Bi), antimony (Sb), lead (Pb), tellurium (Te), and/or selenium (Se).
Dependencies are inferred from the claim text.