Semiconductor device and method of manufacturing same
AssigneeKabushiki Kaisha Toshiba
InventorKazuaki Iwasawa
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Abstract
A semiconductor device includes a deposited-type insulating film disposed on a substrate; a coating-type insulating film disposed on a surface of the deposited-type insulating film and having a film density which is lower than a film density of the deposited-type insulating film; and an intermediate insulating film disposed between the deposited-type insulating film and the coating-type insulating film and having a film density which is intermediate between the film density of the deposited-type insulating film and the film density of the coating-type insulating film.
Claims7
A method of manufacturing a semiconductor device, the method comprising:
- depositing a first insulating film having a first film density on a substrate;
- forming a second insulating film having a second film density on the first insulating film by depositing a silicon insulating film on the first insulating film with a deposition condition to increase Si—OH groups in the silicon insulating film compared to the first insulating film;
- coating an insulating film material in which polysilazane is dissolved on the second insulating film;
- and
- applying a heat treatment to the insulating film material to form a silicon oxide film having a third film density,
- wherein the second film density is less than the first film density and larger than the third film density.
Dependencies are inferred from the claim text.