Semiconductor device including a coupled dielectric layer and metal layer, method of fabrication thereof, and passivating coupling material comprising multiple organic components for use in a semiconductor device

A passivating coupling material for passivating a dielectric material and for facilitating metal deposition on such a passivated dielectric material, wherein the passivating coupling material comprises:

• a first organosilane having the general formula:
• in which:
• n1 is an integer greater than or equal to 1,
• each Si is a silicon atom;
• X1 is a functional group able to react with a surface hydroxyl site of the dielectric material,
• Y1 is either:
• X3, which is a further functional group able to react with a surface hydroxyl site of the dielectric material,
• H, which is a hydrogen atom, or
• R1, which is an organic apolar group;
• Y2 is either:
• X4, which is a further functional group able to react with a surface hydroxyl site of the dielectric material,
• H, which is a hydrogen atom, or
• R2, which is an organic apolar group,
• B1, the presence of which is optional, is a bridging group,
• Z1 is either:
• R3, which is an organic apolar group,
• H, which is a hydrogen atom, or
• X5, which is a hydrolizable functional group,
• Z2 is either:
• R4, which is an organic apolar group,
• H, which is a hydrogen atom, or
• X6, which is a hydrolizable functional group;
• and
• X2 is a hydrolizable functional group;
• and
• a second organosilane having a functional group able to react with a hydrolyzed functional group of the first organosilane, and a ligand for providing a metal nucleation site, the second organosilane having the general formula:
• in which:
• n2 is an integer equal to or greater than or equal to 0,
• each Si is a silicon atom;
• X7 is a functional group able to react with a hydrolyzed functional group of the first organosilane molecule,
• Y3 is either:
• X8, which is a further functional group able to react with a hydrolyzed functional group of the first organosilane molecule,
• H, which is a hydrogen atom, or
• R5, which is an organic apolar group;
• Y4 is either:
• X9, which is a further functional group able to react with a hydrolyzed functional group of the first organosilane molecule,
• H, which is a hydrogen atom, or
• R6, which is an organic apolar group,
• B2, the presence of which is optional, is a bridging group,
• Z3 is either:
• R7, which is an organic apolar group,
• H, which is a hydrogen atom, or
• L1, which is a ligand having an electron donor functionality and which is able to act as a metal nucleation site,
• Z4 is either:
• R8, which is an organic apolar group,
• H, which is a hydrogen atom, or
• L2, which is a ligand having an electron donor functionality and which is able to act as a metal nucleation site, and
• L is a ligand having an electron donor functionality and is able to act as a metal nucleation site,
• wherein the first and second organosilanes together constitute a composition providing metal nucleation sites that promote electroless metal deposition.