BiCMOS performance enhancement by mechanical uniaxial strain and methods of manufacture

A method of manufacturing a BiCMOS device, the method comprising:

• providing a substrate with a first region, a second region, and a third region;
• forming a first MOS transistor in the first region;
• forming a second MOS transistor in the second region;
• forming a first bipolar transistor in the third region;
• forming a first dielectric film over the first MOS transistor, the first dielectric film having a tensile stress;
• and
• forming a second dielectric film over the second MOS transistor and the first bipolar transistor, the second dielectric film having a compressive stress.

A method of manufacturing a BiCMOS device, the method comprising:

• providing a substrate with a first region, a second region, and a third region, the substrate having a first lattice constant;
• forming an NMOS transistor in the first region, the NMOS transistor comprising a channel region with a second lattice constant, the second lattice constant being smaller than the first lattice constant;
• forming a PMOS transistor in the second region, the PMOS transistor comprising a channel region with a third lattice constant, the third lattice constant being larger than the first lattice constant;
• forming a bipolar transistor in the third region, the bipolar transistor comprising a base having the third lattice constant;
• forming a first dielectric film over the NMOS transistor, the first dielectric film having a tensile stress;
• and
• forming a second dielectric film over the PMOS and the bipolar transistor, the second dielectric film having a compressive stress.