Lithographic patterning for sub-90nm with a multi-layered carbon-based hardmask
OwnerShai Haimson, Gabe Schwartz +1inventors
InventorsShai Haimson, Gabe Schwartz, Michael Shifrin
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Abstract
Multi-layered carbon-based hardmask and method to form the same. The multi-layered carbon-based hardmask includes at least top and bottom carbon-based hardmask layers having different refractive indexes. The top and bottom carbon-based hardmask layer thicknesses and refractive indexes are tuned so that the top carbon-based hardmask layer serves as an anti-reflective coating (ARC) layer.
Claims20
A method of fabricating a microelectronic device structure, comprising:
- forming a multi-layered carbon-based hardmask on a substrate layer;
- wherein the multi-layered carbon-based hardmask includes a first carbon-based hardmask layer having a first refractive index and a second carbon-based hardmask layer having a second refractive index;
- patterning a photo resist layer disposed over the multi-layered carbon-based hardmask;
- and
- etching a pattern into the multi-layered carbon-based hardmask.
A method of fabricating a microelectronic device structure, comprising:
- depositing a first carbon-based hardmask layer over a substrate feature layer to be etched;
- depositing a second carbon-based hardmask layer on the first carbon-based hardmask layer to form a multi-layered carbon-based hardmask;
- forming a patterned photo resist layer over the multi-layered carbon-based hardmask;
- etching the multi-layered carbon-based hardmask;
- and
- etching the substrate feature layer.
A computer readable media having instructions stored thereon which when executed by a computer processing system cause the system to perform a method comprising:
- depositing a bottom carbon-based hardmask layer over a substrate feature layer to be etched;
- depositing a top carbon-based hardmask layer on the bottom carbon-based hardmask layer to form a multi-layered carbon-based hardmask;
- forming a patterned photo resist layer over the multi-layered carbon-based hardmask;
- etching the multi-layered carbon-based hardmask;
- and
- etching the substrate feature layer.
Dependencies are inferred from the claim text.