Semiconductor through silicon vias of variable size and method of formation

A method comprising:

• providing a substrate having a first conductive catch pad and a second conductive catch pad formed thereon;
• securing the substrate to an overlying wafer carrier;
• performing a laser etch on the substrate underlying each of the first conductive catch pad and the second conductive catch pad to form a first partial through-substrate via of a first via diameter underlying the first conductive catch pad and a second partial through-substrate via underlying the second conductive catch pad of a second via diameter that differs from the first via diameter wherein a laser is laterally moved to determine a value of at least one of the first via diameter and the second via diameter;
• and
• performing a reactive ion etch (RIE) on the substrate to continue etching the first partial through-substrate via to form a first through-substrate via to the first conductive catch pad and to continue etching the second partial through-substrate via to form a second through-substrate via to the second conductive catch pad, each of the first through-substrate via and the second through-substrate via having a same depth.

A method comprising:

• providing a silicon substrate having a first conductive pad and a second conductive pad formed thereon at an upper surface;
• forming a dielectric layer overlying and electrically separating the first conductive pad and the second conductive pad;
• securing the silicon substrate to an overlying wafer carrier;
• performing a laser etch on a lower surface of the silicon substrate underlying each of the first conductive pad and the second conductive pad to form a first partial through-silicon substrate via having a first via diameter and underlying the first conductive pad and a second partial through-silicon substrate via underlying the second conductive pad having a second via diameter that differs from the first via diameter, said performing implemented by laterally moving a laser when forming at least one of the first via diameter or the second via diameter to determine a via diameter value;
• and
• performing a reactive ion etch on the silicon substrate to continue etching the first partial through-silicon substrate via to form a first through-silicon substrate via to the first conductive pad and to continue etching the second partial through-silicon substrate via to form a second through-silicon substrate via to the second conductive pad, each of the first through-silicon substrate via and the second through-silicon substrate via having a same depth.