Manufacturing method of semiconductor device and film deposition system
AssigneeTokyo Electron Limited
InventorsYasuo Kobayashi, Kenichi Nishizawa, Takatoshi Kameshima, Takaaki Matsuoka
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Abstract
A dielectric film (91) made of CF is deposited on a substrate. A protective layer comprising an SiCN film (93) is formed on the dielectric film (91). A film (94) serving as a hardmask made of SiCO is deposited on the protective layer by a plasma containing active species of silicon, carbon, and oxygen. When the protective layer is formed, an SiC film (92) is deposited on the dielectric film (91) by a plasma containing active species of silicon and carbon, and thereafter the SiCN film (93) is deposited on the SiC film (92) by a plasma containing active species of silicon, carbon, and nitrogen.
Claims8
A manufacturing method of a semiconductor device, comprising the steps of:
- depositing on a substrate, on a surface of which a wiring is formed, a dielectric film made of fluorine-added carbon;
- forming on the dielectric film an adhesion layer including silicon and carbon;
- forming on the adhesion layer a protective layer comprising a nitrogen-added silicon carbide film;
- depositing on the protective layer a film made of oxygen-added silicon carbide by a plasma containing active species of silicon, carbon, and oxygen;
- and
- obtaining a hardmask having a predetermined pattern by etching the film.
Dependencies are inferred from the claim text.