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US 7,803,699 B2Granted
Polysilicon thin film transistor and method of fabricating the same
AssigneeSamsung Mobile Display Co., Ltd.
InventorsJae Kyeong Jeong, Hyun Soo Shin, Yeon Gon Mo
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Abstract
A polysilicon thin film transistor (TFT) may include a substrate, at least one insulating layer, a semiconductor layer, a gate electrode, a source electrode, a drain electrode, and a heat retaining layer formed to contact the semiconductor layer. The heat retaining layer may reduce and/or prevent a reduction in a melt duration time of amorphous silicon during a crystallization process for forming a polysilicon layer of the TFT.
Claims17
A method of fabricating a polysilicon TFT, the method comprising:
- providing a conductive substrate, wherein the conductive substrate is metal;
- forming an insulating layer on the conductive substrate;
- forming an amorphous silicon layer on the insulating layer;
- forming a heat retaining layer on the amorphous silicon layer;
- crystallizing the amorphous silicon layer to form a polysilicon layer;
- forming ohmic contact layers on both ends of the polysilicon layer, the heat retaining layer being removed before the ohmic contact layers are formed;
- forming a gate electrode insulated from the polysilicon layer;
- and
- forming source and drain electrodes electrically connected to the polysilicon layer and on the ohmic contact layers.
6 more elements
Dependencies are inferred from the claim text.