Process for transferring a layer of strained semiconductor material

A method of preparing a semiconductor wafer having a strained layer which comprises:

• growing a strained layer in a strained state to a desired thickness on a matching layer on a donor substrate, wherein the matching layer has a matching lattice parameter that is sufficiently different than the lattice parameter of the strained layer so that the strained layer remains in the strained state;
• growing a strain retention layer of strained SiC on the strained layer to retain the strained layer in a strained state during transfer of the strained layer to form the semiconductor wafer;
• providing a weakened region in the matching layer;
• bonding the strain retention layer to an insulating or semi-insulating layer;
• and
• transferring a part of the matching layer, the strain retention layer and the strained layer to the insulating or semi-insulating layer thus forming a semiconducting layer having strained layers thereon.