Epitaxy silicon on insulator (ESOI)

A method of forming a semiconductor device comprising:

• providing a substrate;
• forming a dielectric layer on the substrate;
• patterning the dielectric layer to form therein a first trench;
• filling the first trench with a first epitaxially grown semiconductor material;
• using the first epitaxially grown semiconductor material as a nucleation site for an additional epitaxially grown semiconductor material, wherein the additional epitaxially grown semiconductor material extends over the dielectric layer;
• forming a second trench extending through at least a portion of the first epitaxially grown semiconductor material past a top surface of the dielectric layer;
• and
• filling the second trench with a dielectric material.

A method of forming a semiconductor device comprising:

• providing a substrate;
• forming a dielectric layer on the substrate;
• patterning the dielectric to form therein a trench;
• filling the trench with a first epitaxially grown semiconductor material;
• using the first epitaxially grown semiconductor material as a nucleation site for an additional epitaxially grown semiconductor material, wherein the additional epitaxially grown semiconductor material extends over the dielectric layer;
• and
• substantially removing the first epitaxially grown semiconductor material and forming a second dielectric material in its place adjoining the additional epitaxially grown semiconductor material.

A method of forming a semiconductor device comprising:

• providing a silicon containing substrate;
• forming a silicon oxide layer on the substrate;
• forming a first opening in the silicon oxide layer to expose a region of underlying substrate;
• epitaxially growing a first silicon containing material on the exposed region of underlying substrate while precluding formation of the first silicon containing material on the silicon oxide layer;
• epitaxially growing a second silicon containing material on the first silicon containing material, the second silicon containing material substantially covering the silicon oxide layer;
• removing a portion of the first silicon containing material to form a second opening;
• filling the second opening with a dielectric material;
• and
• forming an integrated circuit device disposed in the second silicon containing material.