Semiconductor device manufactured with a double shallow trench isolation process
AssigneeHynix Semiconductor Inc.
InventorSeung Joo Baek
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Abstract
A method for manufacturing a semiconductor device includes forming a device isolation film by a double Shallow Trench Isolation (STI) process, forming a first active region having a negative slope and a second active region having a positive slope. Additionally, the method includes applying a recess region and a bulb-type recess region to the above-extended active region so as to prevent generation of horns in the active regions. This structure results in improvement in effective channel length and area.
Claims31
A method for manufacturing a semiconductor device, the method comprising the steps of:
- forming a first trench having a negative slope in a semiconductor substrate to defines an active region;
- forming a hard mask barrier layer over the semiconductor substrate;
- etching the lower part of the first trench by using the hard mask barrier layer as an etching mask to form a second trench having a positive slope;
- removing the hard mask barrier layer;
- forming a device isolation film to fill the first and second trenches;
- and
- forming a gate over the semiconductor substrate.
A method for manufacturing a semiconductor device, the method comprising the steps of:
- forming a first trench having a negative slope in a semiconductor substrate to define an active region;
- forming a hard mask barrier layer over the semiconductor substrate;
- etching the lower part of the first trench by using the hard mask barrier layer as an etching mask to form a second trench having a positive slope;
- removing the hard mask barrier layer;
- forming a device isolation film to fill the first and second trenches;
- etching a given region of the active region to form a recess region;
- and
- forming a gate over the semiconductor substrate including the recess region.
A method for manufacturing a semiconductor device, the method comprising the steps of:
- forming a first trench having a negative slope in a semiconductor substrate to define an active region;
- forming a hard mask barrier layer over the semiconductor substrate;
- etching the lower part of the first trench by using the hard mask barrier layer as an etching mask to form a second trench having a positive slope;
- removing the hard mask barrier layer;
- forming a device isolation film to fill the first and second trenches;
- etching a give the region of the active region to form a first recess region;
- isotropic-etching the lower part of the first recess region to form a second recess region and a bulb-type recess region including the first and second recess regions;
- and
- forming a gate over the semiconductor substrate including the bulb-type recess region.
Dependencies are inferred from the claim text.