US 7,803,684 B2Granted

Method of fabricating semiconductor device having a junction extended by a selective epitaxial growth (SEG) layer

AssigneeSamsung Electronics Co., Ltd.

InventorsSe-myeong Jang, Woun-suck Yang, Jae-man Yoon, Hyun-ju Sung

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Abstract

In a semiconductor device, and a method of fabricating the same, the semiconductor device includes a protrusion extending from a substrate and a selective epitaxial growth (SEG) layer surrounding an upper portion of the protrusion, the SEG layer exposing sidewalls of a channel region of the protrusion.

Claims18

Dependent claims

A method of fabricating a semiconductor device the method comprising:

forming a protrusion that extends from a substrate, the protrusion being formed with an upper portion, a lower portion, a channel region, and a recess that extends through the upper portion and into the lower portion;
forming a selective epitaxial growth (SEG) layer that surrounds the upper portion of the protrusion and has at least one gap that exposes a sidewall of the channel region of the protrusion, the recess of the protrusion being aligned with the gap, wherein:
a width of a first section of the upper portion of the protrusion is less than a width of a first section of the lower portion of the protrusion, the first section of the upper portion of the protrusion corresponding to the recess and being directly above the first section of the lower portion of the protrusion.

Dependencies are inferred from the claim text.

Facts

Application: 12/585,588Filed 18 Sep 2009 · division
Priority: KR 10-2004-007247510 Sep 2004
Published: US 2010/0015768 A121 Jan 2010
Granted: 28 Sep 2010
Term ends: Not estimatedThe source records don’t support an estimate.

Classification12 codes

H10D 30/6211
Fin field-effect transistors [FinFET]: having fin-shaped semiconductor bodies integral with the bulk semiconductor substrates
H10D 30/0245
Of fin field-effect transistors [FinFET]: by further thinning the channel after patterning the channel, e.g. using sacrificial oxidation on fins
H10D 62/021
Manufacture or treatment: forming source or drain recesses by etching e.g. recessing by etching and then refilling
H10P 14/22
Of semiconductor materials: using physical deposition, e.g. vacuum deposition or sputtering

Family

Application11/099,603Parent of this division · filed 6 Apr 2005
US 2010/0015768 A1Pre-grant publication · published 21 Jan 2010
US 7,592,686 B2Parent of this division
US 2006/0054969 A1Published application
US 7,803,684 B2This patent

From the US filing history. Foreign family members aren’t listed.

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Abstract

Facts

Application

12/585,588Filed 18 Sep 2009 · division

Priority

KR 10-2004-007247510 Sep 2004

Published

US 2010/0015768 A121 Jan 2010

Granted

28 Sep 2010

Term ends

Not estimatedThe source records don’t support an estimate.

Classification12 codes

H10D 30/6211
Fin field-effect transistors [FinFET]: having fin-shaped semiconductor bodies integral with the bulk semiconductor substrates
H10D 30/0245
Of fin field-effect transistors [FinFET]: by further thinning the channel after patterning the channel, e.g. using sacrificial oxidation on fins
H10D 62/021
Manufacture or treatment: forming source or drain recesses by etching e.g. recessing by etching and then refilling
H10P 14/22
Of semiconductor materials: using physical deposition, e.g. vacuum deposition or sputtering