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US 7,803,681 B2Granted
Semiconductor device with a bulb-type recess gate
AssigneeHynix Semiconductor Inc.
InventorDae Young Kim
Life of this patent
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Abstract
When a recess of a bulb-type recess gate is formed, the recess formed in a device isolation region is formed to be separated from an edge of an active region. This structure thereby prevents damage of a semiconductor substrate of the edge of the active region and a defect during a Self Alignment Contact (SAC) process. As a result, characteristics and yield of devices improve.
Claims8
A method for manufacturing a semiconductor device, comprising the steps of:
- forming a photoresist film over a semiconductor substrate including a device isolation region and an active region;
- performing a lithography process using an exposure mask to form a photoresist pattern;
- and
- patterning the semiconductor substrate using the photoresist pattern as a mask to form a bulb type recess in the active region and a recess in the device isolation region, wherein a line width of the recess in the device isolation region is smaller than a line width of the bulb-type recess in the active region.
1 more element
Dependencies are inferred from the claim text.