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US 7,803,655 B2Granted
Method to manufacture a phase change memory
AssigneeOvonyx, Inc.
InventorsBrian G. Johnson, Charles H. Dennison
Life of this patent
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Abstract
Briefly, in accordance with an embodiment of the invention, a method to manufacture a phase change memory is provided. The method may include forming a first electrode contacting the sidewall surface and the bottom surface of the phase change material. The method may further include forming a second electrode contacting the top surface of the phase change material.
Claims8
A method comprising:
- forming a pore in an insulator, said pore having a sidewall and a bottom wall;
- forming a first cup-shaped electrode covering said insulator and coating said sidewall and bottom wall of said pore to form a coated pore;
- forming a second cup-shaped electrode in said pore over said first cup-shaped electrode, said first and second cup-shaped electrodes being coupled electrically;
- and
- forming a phase change material, that is able to be electrically switched between a generally amorphous and a generally crystalline state, over said second cup-shaped electrode, the bottom and lateral surfaces of said phase change material entirely contained within said second cup-shaped electrode.
2 more elements
Dependencies are inferred from the claim text.