Method of manufacturing image sensor
AssigneeSamsung Electronics Co., Ltd.
InventorsGil-sang Yoo, Byung-jun Park, Yun-ki Lee
Life of this patent
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Abstract
A method of manufacturing an image sensor includes forming a device isolation region in an active pixel sensor area of a semiconductor substrate and alignment keys in a scribe lane area of the semiconductor substrate, such that the depth of the alignment keys is equal to or shallower than the depth of the device isolation region. The method further includes forming a photoelectric converter in the active pixel sensor area, polishing a rear surface of the semiconductor substrate and using the alignment keys to form a microlens at a position corresponding to the photoelectric converter on the polished rear surface of the semiconductor substrate.
Claims18
A method of manufacturing an image sensor, the method comprising:
- forming a device isolation region in an active pixel sensor area of a semiconductor substrate and alignment keys in a scribe lane area of the semiconductor substrate, such that the depth of the alignment keys is equal to or shallower than the depth of the device isolation region;
- forming a photoelectric converter in the active pixel sensor area;
- polishing a rear surface of the semiconductor substrate;
- and
- using the alignment keys to form a microlens at a position corresponding to the photoelectric converter on the polished rear surface of the semiconductor substrate,
- wherein the using of the alignment keys comprises:
- forming a mask pattern for opening the scribe lane area on the entire polished rear surface of the semiconductor substrate;
- and
- etching the polished rear surface of the semiconductor substrate using the mask pattern to expose the alignment keys.
A method of manufacturing an image sensor, the method comprising:
- forming a device isolation region in an active pixel sensor area of a semiconductor substrate and alignment keys in a scribe lane area of the semiconductor substrate, such that the depth of the alignment keys is equal to or shallower than the depth of the device isolation region;
- forming a photoelectric converter in the active pixel sensor area;
- forming a multi-layer wiring line in an interlayer insulating film formed on the active pixel sensor area;
- polishing a rear surface of the semiconductor substrate;
- forming a mask pattern for opening the scribe lane area on the entire polished rear surface of the semiconductor substrate;
- etching the polished rear surface of the semiconductor substrate using the mask pattern to expose the alignment keys;
- and
- using the alignment keys to form a microlens at a position corresponding to the photoelectric converter on the polished rear surface of the semiconductor substrate.
Dependencies are inferred from the claim text.