Semiconductor device for image sensor
AssigneeDongbu HiTek Co., Ltd.
InventorDong-Bin Park
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Abstract
Embodiments relate to a semiconductor device for an image sensor method of fabricating a semiconductor device for an image sensor having a micro lens. According to embodiments, the method may include forming a lower insulating film having cavities on a substrate, forming an upper insulating film having cavities on the lower insulating film, forming a protective insulating film having metal films on the upper insulating film, forming a number of color filters having a specified pattern on the protective insulating film, forming a planarization layer having a specified curvature on the color filters to bury the color filters in the planarization layer, and forming a number of micro lenses on the planarization layer at respective positions corresponding to the color filters.
Claims6
A method, comprising:
- forming a lower insulating film having cavities over a substrate;
- forming an upper insulating film having cavities over the lower insulating film;
- forming a protective insulating film having metal films over the upper insulating film;
- forming a plurality of color filters having a prescribed pattern over the protective insulating film;
- forming a planarization layer having a specified curvature over the color filters;
- and
- forming a plurality of micro lenses over the planarization layer at respective positions corresponding to positions of the color filters.
Dependencies are inferred from the claim text.