Sensor thin film transistor, thin film transistor substrate having the same, and method of manufacturing the same
AssigneeSamsung Electronics Co., Ltd.
InventorsTae-Hyung Hwang, Hyung-Il Jeon, Ivan Nikulin
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Abstract
A sensor thin film transistor includes a gate electrode, a gate insulation layer formed on the gate electrode, a semiconductor layer having a portion positioned above the gate electrode and on a side of the gate insulation layer opposite the gate electrode, and a source electrode and drain electrode having spaced apart ends positioned on the semiconductor layer, wherein the sensor thin film transistor is operative such that a signal-to-noise ratio is equal to or greater than about 200 when the gate-off voltage applied to the gate electrode is equal to or less than about 0V.
Claims6
A method of manufacturing a thin film transistor substrate, comprising:
- forming a first metal pattern group on a substrate, the first metal pattern group including a driving gate electrode and a sensor gate electrode;
- forming at a predetermined temperature a semiconductor layer on the first metal pattern group;
- forming a second metal pattern group on the semiconductor layer, the second metal pattern group including a driving source electrode, a driving drain electrode, a sensor drain electrode, and a sensor source electrode;
- forming a protective layer having a contact hole on the second metal pattern group;
- and
- forming a pixel electrode on the protective layer;
- wherein the semiconductor layer is formed at a temperature of about 100° C. to about 180° C.
Dependencies are inferred from the claim text.