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US 7,803,519 B2Granted
Method for manufacturing a semiconductor device
AssigneeHynix Semiconductor Inc.
InventorJae Chang Jung
Life of this patent
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Abstract
A method for manufacturing a semiconductor device using a photoresist polymer comprising a fluorine component, a photoresist composition containing the photoresist polymer and an organic solvent to reduce surface tension, by forming a photoresist film uniformly on the whole surface of an underlying layer pattern to allow a subsequent ion-implanting process to be stably performed.
Claims14
A method for manufacturing a semiconductor device, comprising the steps of:
- (a) coating a photoresist composition comprising a photoresist polymer and an organic solvent on an underlying layer of a semiconductor substrate, the photoresist polymer comprising a polymerization-repeating unit represented by Formula 1 and a co-monomer represented by Formula 2:
- wherein R1 is H or C1-C2 alkyl;
- R2 is C1-C10 perfluoroalkyl or partially F-substituted C1-C10 alkyl;
- R3 is an acid labile protecting group;
- and
- the relative ratio of a:b:c:d is 10:10˜30:2˜8:2˜8 by weight parts;
- wherein the R4 is linear or branched C1-C10 alkylene, and n is an integer ranging from 1 to 2;
- (b) baking the resultant structure to form a photoresist film;
- (c) exposing the photoresist film to light;
- (d) baking the exposed photoresist film;
- (e) developing the resultant structure of step (iv) to obtain a first photoresist pattern;
- and
- (f) etching the underlying layer using the first photoresist pattern as an etching mask to form an underlying layer pattern.
10 more elements
A method for manufacturing a semiconductor device, comprising:
- (a) forming a first photoresist pattern on an underlying layer of a semiconductor substrate;
- (b) etching the underlying layer using the first photoresist pattern as an etching mask to form an underlying layer pattern;
- (c) removing the first photoresist pattern;
- (d) coating a photoresist composition comprising a photoresist polymer and an organic solvent on the whole surface of the resultant structure of step (c) to form a flattened photoresist film which fills the underlying layer pattern, the photoresist polymer comprising a polymerization-repeating unit represented by Formula 1:
- wherein R1 is H or C1-C2 alkyl;
- R2 is C1-C10 perfluoroalkyl or partially F-substituted C1-C10 alkyl;
- R3 is an acid labile protecting group;
- and
- the relative ratio of a:b:c:d is 10:10˜30:2˜8:2˜8 by weight parts;
- and
- (e) performing an exposure process and a developing process on the resultant structure of step (d) using an ion-implanting mask to form a second photoresist pattern.
8 more elements
Dependencies are inferred from the claim text.