Method of forming fine contact hole and method of fabricating semiconductor device using block copolymers

A method of fabricating a semiconductor device, comprising:

• forming a device isolation region on a substrate to define a plurality of parallel active regions;
• forming an insulation layer on the active regions;
• forming a self-assemble induction layer on the insulation layer;
• forming a recess in the self-assemble induction layer, the recess being aligned with the active regions and crossing the active regions;
• forming a block copolymer layer in the recess to form a plurality of polymer domains at a distance from a sidewall of the recess and a polymer matrix surrounding the polymer domains, the polymer domains being spaced apart from each other by the polymer matrix and aligned with the respective active regions over which the recess crosses;
• removing the polymer domains;
• etching the self-assemble induction layer using the polymer matrix as a mask to form a plurality of openings through the self-assemble induction layer to expose the insulation layer;
• removing the polymer matrix during or after the etching of the self-assemble induction layer;
• and
• etching the insulation layer exposed by the opening by using the self-assemble induction layer as a mask so as to form a plurality of contact holes.