Process for producing siox particles
AssigneesThe University of Electro-Communications, Denki Kagaku Kogyo Kabushiki Kaisha
InventorsShinji Nozaki, Kazuo Uchida, Hiroshi Morisaki, Takashi Kawasaki, Masahiro Ibukiyama
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Abstract
Crystalline silicon particles of nanometer order usable as a semiconductor element are provided by a method for producing SiOx particles, comprising irradiating SiOx (X is 0.5 or more and less than 2.0) particles each including therein an amorphous silicon particle having a particle diameter of 0.5 to 5 nm with light, and preferably a laser beam, to produce SiOx (X is 0.5 or more and less than 2.0) particles each including therein a crystalline silicon particle having a particle diameter of 1 to 10 nm.
Claims3
A method for producing SiOx particles, comprising irradiating SiOx, wherein x is 0.5 or more and less than 2.0, particles each containing therein an amorphous silicon particle having a particle diameter of 0.3-0.8 nm with light to produce SiOx, wherein x is 0.5 or more and less than 2.0, particles each containing therein a crystalline silicon particle having a particle diameter of 1 to 10 nm.
Dependencies are inferred from the claim text.