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US 7,803,246 B2Granted
Etching system
AssigneeTaiwan Semiconductor Manufacturing Company, Ltd.
InventorsTu-Yen Huang, Yi-Hong Chen, Ta Chin Lee, Shang-Sheng Wu, Chiun-Tong Su
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AssigneeTaiwan Semiconductor Manufacturing Company, Ltd.
InventorsTu-Yen Huang, Yi-Hong Chen, Ta Chin Lee, Shang-Sheng Wu, Chiun-Tong Su
Estimating the term…
An etching system. An etching chamber includes an exhaust port. A gas input pipe is connected to the etching chamber, inputting etching process gas thereinto. A top RF electrode is disposed above the etching chamber. A bottom RF electrode is disposed under the etching chamber and opposite the top RF electrode. The etching process gas is transformed into plasma by operation of the top and bottom RF electrodes. An exhaust pump is connected to the exhaust port, expelling the plasma from the etching chamber. A base is disposed in the etching chamber. A focus ring is disposed on the base, accommodating a wafer. The wafer is etched by the plasma. A barricade is disposed on the focus ring and corresponds to the exhaust port, regulating the plasma flowing through the wafer.
An etching system, comprising:
Dependencies are inferred from the claim text.
Drawings are temporarily unavailable. Open the PDF at USPTO
From the US filing history. Foreign family members aren’t listed.
Mechanical discharge control means: focus rings
Radio frequency generated discharge: the radio frequency energy being capacitively coupled to the plasma
Electric discharge tubes or discharge lamps
About 2 years 4 months of term left · ends 1 Mar 2029 (estimated)
1. Field of the Invention
The invention relates to an etching system, and more particularly to an etching system providing enhanced uniformity of etching applied to a wafer.
2. Description of the Related Art
The invention can be more fully understood by reading the subsequent detailed description and examples with references made to the accompanying drawings, wherein:
FIG. 1 is a partial side view and cross section of a conventional etching system;
FIG. 2 is a partial side view and cross section of an etching system of an embodiment of the invention;
The following description is of the best-contemplated mode of carrying out the invention. This description is made for the purpose of illustrating the general principles of the invention and should not be taken in a limiting sense. The scope of the invention is best determined by reference to the appended claims.
Referring to FIG. 2, an etching system 100 comprises an etching chamber 110, a gas input pipe 120, a top RF electrode 130, a bottom RF electrode 140, a quartz disk 150, an exhaust pump 160, a base 170, a focus ring 180, and a barricade 190.
The etching chamber 110 comprises an exhaust port 111. The exhaust pump 160 is disposed in the exterior of the etching chamber 110 and connected to the exhaust port 111.