Sb-Te alloy sintered compact sputtering target
AssigneeNippon Mining & Metals Co., Ltd.
InventorHideyuki Takahashi
Life of this patent
Estimating the term…
Loading patent…
AssigneeNippon Mining & Metals Co., Ltd.
InventorHideyuki Takahashi
Estimating the term…
Provided is an Sb—Te alloy sintered compact sputtering target having at least Sb or Te as its primary component, wherein surface roughness Ra is 0.4 μm or less, purity excluding gas components is 4N or more, content of gas components as impurities is 1500 ppm or less, and average crystal grain size is 50 μm or less. With this Sb—Te alloy sintered compact sputtering target, the density of defects having a maximum length of 10 μm or greater arising in a surface finish by machining is 80 or less in an 800 μm square. Thus, the Sb—Te alloy sputtering target structure can be uniformalized and refined, generation of cracks in the sintered target can be inhibited, and generation of arcing during sputtering can be inhibited. Further, surface ruggedness caused by sputter erosion can be reduced in order to obtain a high quality Sb—Te alloy sputtering target.
An Sb—Te alloy sintered compact sputtering target having at least Sb or Te as its primary component, wherein surface roughness Ra is 0.4 μm or less, purity excluding gas components is 4N or more, content of gas components as impurities is 1500 ppm or less, average crystal grain size is 50 μm or less, and a density of defects having a maximum length of 10 μm or greater arising in a surface finish by machining is 80 or less in an 800 μm square.
Dependencies are inferred from the claim text.
Drawings are temporarily unavailable. Open the PDF at USPTO
From the US filing history. Foreign family members aren’t listed.
Alloys based on antimony or bismuth
Alloys based on a metal not provided for in groups c22c5/00 -
Cathode assembly for sputtering apparatus, e.g. Target: metallurgical or chemical aspects of target preparation, e.g. casting, powder metallurgy
Apparatus or processes specially adapted for the manufacture of record carriers: sputtering or spin-coating layers
Term ended 11 May 2026 (estimated)
The present invention relates to an Sb—Te alloy sintered compact sputtering target capable of effectively inhibiting the generation of particles.
In recent years, a thin film formed from an Sb—Te material as the phase-change recording material is being used as a medium for recording information using so-called phase transformation. As a method of forming a thin film formed from an Sb—Te alloy material, a generally employed means known as a physical deposition method such as a vacuum deposition method or a sputtering method is used. In particular, a magnetron sputtering method is often used for forming such a thin film from the perspective of operability and coating stability.
Formation of a film according to the sputtering method is conducted by physically colliding positive ions such as Ar ions to a target disposed on a negative electrode, discharging the material configuring the target with such collision energy, and laminating a film having approximately the same composition as the target material on a substrate on the opposite positive electrode side.
FIG. 1 is an SEM photograph of the target surface of Example 2;
FIG. 2 is an SEM photograph of the target surface of Example 3;
FIG. 3 is an SEM photograph of the target cross section of Example 3;
The present invention obtains a sintered compact sputtering target by sintering Sb—Te alloy gas atomized powder or powder obtained through mechanical pulverization.
Generally speaking, with gas atomized powder, it is possible to obtain powder that is much finer than mechanical powder. In addition, since it is possible to prevent contamination caused by the use of a pulverizer, it could be said that it would be desirable to directly use gas atomized powder as sintering powder. A target sintered with the foregoing gas atomized powder can be processed to make the surface roughness Ra small at 0.1 μm or less. As described later, this is superior in terms of characteristics in comparison to machine-pulverized powder.
Nevertheless, there is no particular problem in using machine-pulverized powder so as long as it is able to satisfy the conditions of the present invention. Upon performing mechanical pulverization, it is desirable to perform this under an inert atmosphere in order to reduce the oxygen content. A vibatory ball mill or the like may be used in mechanical pulverization.