Laser processing apparatus and laser processing process
AssigneeSemiconductor Energy Laboratory Co., Ltd.
InventorsHideto Ohnuma, Nobuhiro Tanaka, Hiroki Adachi
Life of this patent
Estimating the term…
Abstract
A laser processing process which comprises laser annealing a silicon film 2 μm or less in thickness by irradiating a laser beam 400 nm or less in wavelength and being operated in pulsed mode with a pulse width of 50 nsec or more, and preferably, 100 nsec or more. A laser processing apparatus which comprises a laser generation device and a stage for mounting thereon a sample provided separately from said device, to thereby prevent transfer of vibration attributed to the movement of the stage to the laser generation device and the optical system. A stable laser beam can be obtained to thereby improve productivity.
Claims9
A method of manufacturing a semiconductor device comprising:
- forming a semiconductor layer over a glass substrate;
- and
- irradiating the semiconductor layer with a harmonic of a pulse laser beam having a cross section having a width and a length while moving the substrate in a direction of the width per pulse by a distance smaller than the width,
- wherein 80 to 98% of one irradiated region of the semiconductor layer overlaps with a neighboring irradiated region of the semiconductor layer, and
- wherein the harmonic of the pulse laser beam is a fourth harmonic.
A method of manufacturing a semiconductor device comprising:
- forming a semiconductor layer over a glass substrate;
- and
- irradiating the semiconductor layer with a harmonic of a pulse laser beam having a cross section having a width and a length while moving the substrate in a direction of the width per pulse by a distance smaller than the width,
- wherein the number of pulses irradiated on one irradiated region is 5 to 50, and
- wherein the harmonic of the pulse laser beam is a fourth harmonic.
Dependencies are inferred from the claim text.