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US 7,799,376 B2Granted
Method of controlling film stress in MEMS devices
AssigneeDALSA Semiconductor Inc.
InventorsVincent Fortin, Luc Ouellet
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Abstract
A structural film, typically of silicon, in MEMS or NEMS devices is fabricated by depositing the film in the presence of a gas other than nitrogen, and preferably argon as the carrier gas.
Claims9
A method of fabricating a structural silicon film in MEMS or NEMS devices, comprising:
- depositing said silicon film using an SiH4-based precursor gas in the presence of phosphine as a dopant and argon as a carrier gas by LPCVD at a deposition temperature less than 580° C.;
- and
- wherein the deposited silicon film has a tensile stress.
Dependencies are inferred from the claim text.