Nanowire field-effect transistors
AssigneeInternational Business Machines Corporation
InventorsSarunya Bangsaruntip, Guy Moshe Cohen, Katherine Lynn Saenger
Life of this patent
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Abstract
Field-effect transistors (FETs) having nanowire channels are provided. In one aspect, a FET is provided. The FET comprises a substrate having a silicon-on-insulator (SOI) layer which is divided into at least two sections electrically isolated from one another, one section included in a source region and the other section included in a drain region; a channel region connecting the source region and the drain region and including at least one nanowire; an epitaxial semiconductor material, grown from the SOI layer, covering the nanowire and attaching the nanowire to each section of the SOI layer; and a gate over the channel region.
Claims22
A field-effect transistor (FET) comprising:
- a substrate having a silicon-on-insulator (SOI) layer which is divided into at least two sections electrically isolated from one another, one section forming a source region and the other section forming a drain region;
- a channel region comprising at least one nanowire that connects the source region and the drain region, wherein the nanowire is disposed over the SOI layer;
- an epitaxial semiconductor material, grown from the SOI layer, connecting the nanowire to each section of the SOI layer;
- and
- a gate over the channel region.
Dependencies are inferred from the claim text.