Methods of depositing materials over substrates, and methods of forming layers over substrates

A method of depositing material over a semiconductor substrate, comprising:

• forming a first mixture that comprises one or more metal-containing precursors dispersed in a supercritical fluid;
• and
• performing at least one iteration comprising the following steps in the following order:
• flowing the first mixture into a chamber containing the semiconductor substrate to form a monolayer over a surface of the semiconductor substrate, the monolayer containing one or more metals from the one or more metal-containing precursors, the first mixture being flowed into the reaction chamber under conditions such that the supercritical fluid transforms from a supercritical state to a non-supercritical state within the chamber to thereby reduce solubility of the one or more metal-containing precursors within the mixture and cause release of the one or more metal-containing precursors from the mixture as a pulse of the one or more metal-containing precursors within the chamber;
• purging the chamber;
• flowing one or more oxygen-containing precursors into the chamber, oxygen from the one or more oxygen-containing precursors reacting with the one or more metals of the monolayer;
• and
• purging the chamber.