Method and system for FET-based amplifier circuits

A method using a field-effect transistor (FET) having a gate node, a source node and a drain node, the method comprising:

• implementing a first circuit state in which the gate node, the source node and the drain node are connected to inputs that generate a stored charge at the gate node, the amount of stored charge at the gate node being responsive to an input voltage level;
• and
• implementing a second circuit state in which
• the drain node is connected to a voltage source,
• the source node is connected to a load, and
• while the charge stored at the gate node during the first circuit state is preserved, current between the drain node to the source node drives a voltage level of the load to a proportionally amplified version of the input voltage level;
• changing a gate-to-source voltage level of the FET to cause a change in a gate-to-drain voltage of the FET through charge distribution of the charge stored at the gate node.

A method using a field-effect transistor (FET) having a gate node, a source node and a drain node, the method comprising:

• implementing a first circuit state in which the gate node, the source node and the drain node are connected to inputs that generate a stored charge at the gate node, the amount of stored charge at the gate node being responsive to an input voltage level;
• and
• implementing a second circuit state in which
• the drain node is connected to a voltage source,
• the source node is connected to a load, and
• while the charge stored at the gate node during the first circuit state is preserved, current between the drain node to the source node drives a voltage level of the load to a proportionally amplified version of the input voltage level;
• wherein, in the first circuit state, the gate node is connected to the input voltage level and the source node and the drain node are each connected to a reference voltage level.

A method using a field-effect transistor (FET) having a gate node, a source node and a drain node, the method comprising:

• implementing a first circuit state in which the gate node, the source node and the drain node are connected to inputs that generate a stored charge at the gate node, the amount of stored charge at the gate node being responsive to an input voltage level;
• and
• implementing a second circuit state in which
• the drain node is connected to a voltage source,
• the source node is connected to a load, and
• while the charge stored at the gate node during the first circuit state is preserved, current between the drain node to the source node drives a voltage level of the load to a proportionally amplified version of the input voltage level;
• wherein, in the first circuit state, the gate node is connected to a reference voltage level and the source node and the drain node are each connected to the input voltage level.

A method using a field-effect transistor (FET) having a gate node, a source node and a drain node, the method comprising:

• implementing a first circuit state in which the gate node, the source node and the drain node are connected to inputs that generate a stored charge at the gate node, the amount of stored charge at the gate node being responsive to an input voltage level;
• and
• implementing a second circuit state in which
• the drain node is connected to a voltage source,
• the source node is connected to a load, and
• while the charge stored at the gate node during the first circuit state is preserved, current between the drain node to the source node drives a voltage level of the load to a proportionally amplified version of the input voltage level;
• wherein, in the first circuit state, the gate node is connected to a first voltage level, and the source node and the drain node are each connected to a second voltage level and wherein the difference between the first and second voltage levels is responsive to the input voltage level.

A method using a field-effect transistor (FET) having a gate node, a source node and a drain node, the method comprising:

• implementing a first circuit state in which the gate node, the source node and the drain node are connected to inputs that generate a stored charge at the gate node, the amount of stored charge at the gate node being responsive to an input voltage level;
• and
• implementing a second circuit state in which
• the drain node is connected to a voltage source,
• the source node is connected to a load, and
• while the charge stored at the gate node during the first circuit state is preserved, current between the drain node to the source node drives a voltage level of the load to a proportionally amplified version of the input voltage level;
• wherein, in the first circuit state, a capacitor is connected to a gate node on a first side of the capacitor and to a reference voltage on a second side of the capacitor and, in the second circuit state, the capacitor is connected to a voltage level derived from a previous amplification stage on the second side of the capacitor.

A method using a field-effect transistor (FET) having a gate node, a source node and a drain node, the method comprising:

• storing a charge at the gate node of the FET, the charge being responsive to a first voltage level;
• and
• while preserving the charge stored at the gate node, enabling current, from a voltage source and through a source-drain path of the FET, to drive the source node to a second voltage level that is a proportional amplification of the first voltage level;
• and
• changing a gate-to-source voltage level of the FET to cause a change in a gate-to-drain voltage of the FET through charge distribution of the charge stored at the gate node.