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US 7,791,072 B2Granted
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AssigneesCanon Kabushiki Kaisha, Tokyo Institute of Technology
InventorsHideya Kumomi, Hideo Hosono, Toshio Kamiya, Kenji Nomura
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Abstract
An active matrix display comprising a light control device and a field effect transistor for driving the light control device. The active layer of the field effect transistor comprises an amorphous.
Claims12
An active matrix display comprising:
- a light control device;
- and
- a field effect transistor for driving the light control device,
- wherein an active layer of the field effect transistor comprises an amorphous oxide of a compound having
- (a) a composition when in a crystalline state represented by In2-xM3xO3 (Znl-yM2yO)m, wherein M2 is Mg or Ca;
- M3 is B, Al, Ga or Y;
- 0≦x≦2;
- 0≦y≦1;
- and m is zero or a natural number less than 6, or a mixture of said compounds;
- (b) an electron carrier concentration of 1012/cm3 or more and less than 1018/cm3, wherein an electron mobility of the active layer tends to increase with increasing electron carrier concentration and wherein a current between drain and source terminals of the field effect transistor when no gate voltage is applied is less than 10 microamperes ;
- and
- (c) controlled oxygen defect density resulting from subjecting the amorphous oxide to treatment in an atmosphere containing oxygen at a predetermined pressure upon or after film formation thereof.
9 more elements
An active matrix display comprising:
- a first electrode;
- a second electrode;
- a liquid crystal interposed between the first and second electrodes;
- and
- a field effect transistor for driving the liquid crystal,
- wherein an active layer of the transistor comprises an amorphous oxide of a compound having
- (a) a composition when in a crystalline state represented by In2-xM3xO3 (Znl-yM2yO)m, wherein M2 is Mg or Ca;
- M3 is B, Al, Ga or Y;
- 0≦x≦2;
- 0≦y≦1;
- and m is zero or a natural number less than 6, or a mixture of said compounds;
- (b) a carrier concentration of 1012/cm3 or more and less than 1018/cm3, wherein an electron mobility of the active layer tends to increase with increasing electron carrier concentration, and wherein a current between drain and source terminals of the field effect transistor when no gate voltage is applied is less than 10 microamperes;
- and
- (c) controlled oxygen defect density resulting from subjecting the amorphous oxide a treatment in an atmosphere containing oxygen at a predetermined pressure upon or after film formation thereof.
11 more elements
Dependencies are inferred from the claim text.