Optoelectronic device with germanium photodetector
AssigneeInternational Business Machines Corporation
InventorsSolomon Assefa, Stephen Walter Bedell, Yurii A. Vlasov, Fengnian Xia
Life of this patent
Estimating the term…
Abstract
An optoelectronic device comprises a photodetector feature, an interfacial layer disposed above at least a portion of the photodetector feature, and a vertical contact disposed on at least a portion of the interfacial layer. The photodetector feature comprises germanium and is operative to convert a light signal into an electrical signal. The interfacial layer comprises nickel. Finally, the vertical contact is operative to transmit the electrical signal from the photodetector feature.
Claims10
A method of forming an optoelectronic device, the method comprising the steps of:
- forming a photodetector feature, the photodetector feature comprising germanium and operative to convert a light signal into an electrical signal;
- forming an interfacial layer above at least a portion of the photodetector feature, wherein the interfacial layer is formed by depositing nickel above the photodetector feature and applying an annealing process such that the interfacial layer comprises an alloy of nickel and an element of a layer directly therebelow;
- forming a vertical contact on at least a portion of the interfacial layer, the vertical contact operative to transmit the electrical signal from the photodetector feature;
- and
- forming a capping layer at least partially between the photodetector feature and the interfacial layer.
Dependencies are inferred from the claim text.