Hall effect device and method

A method of producing a Hall effect device, comprising:

• providing a substrate having a first conductivity type;
• providing an epitaxial layer having a second conductivity type defining a Hall effect portion;
• providing a conductive buried layer having the second conductivity type between the epitaxial layer and the substrate;
• coupling first and second terminals to the conductive buried layer via a conductive member;
• coupling third and fourth terminals to the epitaxial layer;
• and
• providing an isolation structure between the third and fourth terminals and the collector diffusion.

A magnetic sensing method, comprising:

• providing a first Hall effect device including a Hall effect portion and a conductive buried layer between the Hall effect portion and a substrate;
• coupling a first terminal to the Hall effect portion;
• coupling a second terminal to the conductive buried layer via a conductive member;
• coupling third and fourth output terminals to the Hall effect portion on opposite sides of the first voltage terminal;
• providing an isolation structure between the third and fourth terminals and the collector diffusion;
• connecting the first and second terminals to first and second respective voltage potentials;
• and
• determining the voltages at the third and fourth terminals in response to a magnetic field.

A magnetic sensing method, comprising:

• providing first and second Hall effect devices, each including a Hall effect portion and a conductive buried layer between the Hall effect portion and a substrate with first and second terminals coupled to the conductive buried layer and third and fourth terminals coupled to the Hall effect portion;
• coupling the third terminal of the first Hall effect device to the fourth terminal of the second Hall effect device;
• coupling the fourth terminal of the first Hall effect device to the third terminal of the second Hall effect device;
• connecting the first terminal of the first Hall effect device to a first voltage potential and the second terminal of the second Hall effect device to a second voltage potential;
• and
• determining the voltages at the third and fourth terminals of the first Hall effect device in response to a magnetic field.

A semiconductor device, comprising:

• first and second Hall effect devices, each including:
• a substrate having a first conductivity type;
• an epitaxial layer having a second conductivity type defining a Hall effect portion;
• a conductive buried layer having the second conductivity type situated between the epitaxial layer and the substrate;
• and
• first, second, third and fourth terminals;
• wherein:
• the second terminal is coupled to the conductive buried layer;
• the first terminal of the first Hall effect device is coupled to the fourth terminal of the second Hall effect device;
• the second terminal of the first Hall effect device is coupled to the third terminal of the second Hall effect device;
• the third terminal of the first Hall effect device is coupled to the first terminal of the second Hall effect device;
• and
• the fourth terminal of the first Hall effect device is coupled to the second terminal of the second Hall effect device.

A semiconductor device, comprising:

• first and second Hall effect devices, each including:
• a substrate having a first conductivity type;
• an epitaxial layer having a second conductivity type defining a Hall effect portion;
• a conductive buried layer having the second conductivity type situated between the epitaxial layer and the substrate;
• and
• first, second, third and fourth terminals;
• wherein:
• the second terminal is coupled to the conductive buried layer;
• the third terminal of the first Hall effect device is coupled to the fourth terminal of the second Hall effect device;
• and
• the fourth terminal of the first Hall effect device is coupled to the third terminal of the second Hall effect device.

A semiconductor device, comprising:

• first and second Hall effect devices, each including:
• a substrate having a first conductivity type;
• an epitaxial layer having a second conductivity type defining a Hall effect portion;
• a conductive buried layer having the second conductivity type situated between the epitaxial layer and the substrate;
• and
• first, second, third and fourth terminals;
• wherein:
• the second terminal is coupled to the conductive buried layer;
• the third terminal of the first Hall effect device is coupled to the third terminal of the second Hall effect device;
• and
• the fourth terminal of the first Hall effect device is coupled to the fourth terminal of the second Hall effect device.

A semiconductor device, comprising:

• a first Hall effect device;
• a second Hall effect device situated generally perpendicular to the first Hall effect device;
• the first and second Hall effect devices including:
• a substrate having a first conductivity type;
• an epitaxial layer having a second conductivity type defining a Hall effect portion;
• a conductive buried layer having the second conductivity type situated between the epitaxial layer and the substrate;
• and
• first, second, third and fourth terminals;
• wherein:
• the second terminal is coupled to the conductive buried layer;
• the first terminal of the first Hall effect device is coupled to the first terminal of the second Hall effect device;
• the second terminal of the first Hall effect device is coupled to the second terminal of the second Hall effect device;
• the third terminal of the first Hall effect device is coupled to the fourth terminal of the second Hall effect device;
• and
• the fourth terminal of the first Hall effect device is coupled to the third terminal of the second Hall effect device.

A magnetic sensing method, comprising:

• providing first and second Hall effect devices, each including a Hall effect portion and a conductive buried layer between the Hall effect portion and a substrate;
• configuring the first and second Hall effect devices such that they are symmetric, the configuring comprising at least:
• coupling a first terminal to the Hall effect portion;
• coupling a second terminal to the conductive buried layer;
• coupling third and fourth output terminals to the Hall effect portion on opposite sides of the first voltage terminal;
• and
• connecting the first and second terminals to first and second respective voltage potentials;
• connecting the first and second Hall effect devices, the connecting of which comprises:
• coupling the first terminal of the first Hall effect device to the fourth terminal of the second Hall effect device;
• coupling the second terminal of the first Hall effect device to the third terminal of the second Hall effect device;
• coupling the third terminal of the first Hall effect device to the first terminal of the second Hall effect device;
• coupling the fourth terminal of the first Hall effect device to the second terminal of the second Hall effect device;
• and
• determining the voltages at the third and fourth terminals in response to a magnetic field.