Back to results
US 7,781,877 B2Granted
Packaged integrated circuit devices with through-body conductive vias, and methods of making same
AssigneeMicron Technology, Inc.
InventorsTongbi Jiang, Chia Yong Poo
Life of this patent
Estimating the term…
Abstract
A device is disclosed which includes at least one integrated circuit die, at least a portion of which is positioned in a body of encapsulant material, and at least one conductive via extending through the body of encapsulant material.
Claims21
A device, comprising:
- a first subassembly and a second subassembly individually having a front side and a back side, the back sides of the first and second subassemblies facing each other, the first and second subassemblies individually having:
- an encapsulant material;
- a semiconductor die embedded in the encapsulant material, the semiconductor die having an active surface generally flush with the front side of the first or second subassembly and a back surface embedded in the encapsulant material;
- a conductive line on the front side of the individual first and second subassemblies and on the active surface of the semiconductor die;
- an adhesive material between and in direct contact with the encapsulant material at the back sides of the first and second subassemblies;
- and
- a conductive via that extends from the front side of the first subassembly, through the adhesive material, to the front side of the second subassembly, the conductive via being in direct contact with the conductive lines of both the first and second subassemblies.
4 more elements
A semiconductor device package, comprising:
- a first semiconductor structure;
- a second semiconductor structure proximate to the first semiconductor structure;
- a conductive structure between and in direct contact with both the first and second semiconductor structure;
- wherein the individual first and second semiconductor structure include:
- a first subassembly and a second subassembly individually having a front side and a back side, the back sides of the first and second subassemblies facing each other, the first and second subassemblies individually having:
- an encapsulant material;
- a semiconductor die embedded in the encapsulant material, the semiconductor die having an active surface generally flush with the front side of the first or second subassembly and a back surface embedded in the encapsulant material;
- a conductive line on the front side of the individual first and second subassemblies and on the active surface of the semiconductor die;
- an adhesive material between and in direct contact with the encapsulant material at the back sides of the first and second subassemblies;
- and
- a conductive via that extends from the front side of the first subassembly, through the adhesive material, to the front side of the second subassembly, the conductive via being in direct contact with the conductive lines of both the first and second subassemblies.
8 more elements
A method of manufacturing a semiconductor device, comprising:
- encapsulating a first semiconductor die with a first encapsulant into a first subassembly having a first front side and a first back side, the first semiconductor die having a first active surface generally flush with the first front side and a first back surface embedded in the first encapsulant;
- encapsulating a second semiconductor die with a second encapsulant into a second subassembly having a second front side and a second back side, the second semiconductor die having a second active surface generally flush with the second front side and a second back surface embedded in the second encapsulant;
- attaching the first subassembly to the second subassembly with an adhesive material, the first and second back sides of the first and second subassemblies facing each other;
- forming a conductive line on the individual first and second front sides of the individual first and second subassemblies;
- and
- forming a conductive via that extends from the first front side of the first subassembly, through the adhesive material, to the front side of the second subassembly, the conductive via being in direct contact with the conductive lines of both the first and second subassemblies.
3 more elements
Dependencies are inferred from the claim text.