Semiconductor device

A semiconductor device comprising:

• a first field effect transistor and a second field effect transistor each having a channel region formed in a single crystal semiconductor substrate;
• a memory circuit provided above the first field effect transistor and the second field effect transistor, wherein the memory circuit includes an organic memory element comprising:
• a first conductive layer electrically connected to the first field effect transistor,
• an insulating layer provided so as to cover an edge portion of the first conductive layer,
• an organic compound layer provided over the first conductive layer and the insulating layer, and
• a second conductive layer provided over the organic compound layer;
• and
• a third conductive layer serving as an antenna, which is provided above the memory circuit,
• wherein the third conductive layer serving as the antenna is electrically connected to the second field effect transistor.

A semiconductor device comprising:

• a field effect transistor having a channel region formed in a single crystal semiconductor substrate;
• a memory circuit provided above the field effect transistor, wherein the memory circuit includes an organic memory element comprising:
• a first conductive layer electrically connected to the field effect transistor,
• an insulating layer provided so as to cover an edge portion of the first conductive layer,
• an organic compound layer provided so as to cover the first conductive layer which is not covered with the insulating layer and an edge portion of the insulating layer, and
• a second conductive layer provided so as to cover the organic compound layer and the insulating layer which is not covered with the organic compound layer;
• and
• a third conductive layer serving as an antenna,
• wherein the third conductive layer serving as the antenna and the first conductive layer are provided in a same layer.

A semiconductor device comprising:

• a first field effect transistor and a second field effect transistor each having a channel region formed in a single crystal semiconductor substrate;
• a memory circuit provided above the first field effect transistor and the second field effect transistor, wherein the memory circuit includes an organic memory element comprising:
• a first conductive layer electrically connected to the first field effect transistor, an insulating layer provided so as to cover an edge portion of the first conductive layer;
• an organic compound layer provided so as to cover the first conductive layer which is not covered with the insulating layer and an edge portion of the insulating layer;
• and
• a second conductive layer provided so as to cover the organic compound layer and the insulating layer which is not covered with the organic compound layer;
• and
• a third conductive layer serving as an antenna, which is provided above the memory circuit,
• wherein the third conductive layer serving as the antenna is electrically connected to the second field effect transistor.