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US 7,781,358 B2Granted
Antiferroelectric multilayer ceramic capacitor
AssigneeTRS Technologies, Inc.
InventorsWesley S. Hackenberger, Seongtae Kwon
Life of this patent
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Abstract
An antiferroelectric ceramic material that can be formed into a multilayer capacitor is disclosed. The antiferroelectric ceramic material is selected from the Pb(Sn, Zr, Ti)O3 (PSnZT) composition family.
Claims15
A high energy density, antiferroelectric multilayer ceramic capacitor, comprising:
- at least one ceramic layer comprising a composition selected from the group consisting of:
- Pb(Snx,Zry,Tiz)O3 with x+y+z=100 mol % and x ranging from 0.1 to 80 mol %, y ranging from 0 to 99.9 mol %, and z ranging from 0 to 30 mol %;
- and
- (Pb1-zMz)1-tRt(Sn, Zr,Ti)1-t/4O3;
- and
- (Pb1-zMz)1-t(3/2)Rt(Sn,Zr,Ti)O3;
- and
- C[(Pb1-zMz)1-tRt(Sn, Zr, Ti)1-t/4O3]+1−C[(Pb1-zMz)1-t(3/2)Rt(Sn, Zr, Ti)O3];
- with M being an ion with a 2+ valance selected from the group of elements consisting of Sr and Ba with z ranging from 0 to 20 mol % and the portions of Sn, Zr, and Ti varying over the ranges indicated in (1) above;
- with R being an ion with 3+ valance selected from the group of elements consisting of La, Ce, Pr, Nd, Pm, Sm, Eu, Gd, Tb, Dy, Ho, Er, Tm, Yb and Lu;
- t ranging from 0 to 10 mol %;
- and C ranging from 0 to 1;
- and
- a conductive electrode formed upon the at least one ceramic layer.
11 more elements
A method of making a high energy density, antiferroelectric material for use in a high energy density, antiferroelectric multilayer ceramic capacitor, comprising:
- forming a powder mixture comprising:
- a raw material powder;
- a solvent;
- and
- pH adjusters;
- wherein the raw material powder comprises about stoichiometric proportions of oxides, carbonates, hydroxides or hydrated versions thereof to form the high energy density, antiferroelectric material
- mixing the powder mixture to form a slurry;
- drying the slurry to remove the solvent;
- heating the dried slurry to form a antiferroelectric material having a predominantly perovskite crystalline structure having a composition selected from the group consisting of:
- Pb(Snx,Zry,Tiz)O3 with x+y+z=100 mol % and x ranging from 0.1 to 80 mol %, y ranging from 0 to 99.9 mol %, and z ranging from 0 to 30 mol %;
- and
- (Pb1-zMz)1-tRt(Sn, Zr,Ti)1-t/4O3;
- and
- (Pb1-zMz)1-t(3/2)Rt(Sn,Zr,Ti)O3;
- and
- C[(Pb1-zMz)1-tRt(Sn, Zr, Ti)1-t/4O3]+1−C[(Pb1-zMz)1-t(3/2)Rt(Sn, Zr, Ti)O3];
- with M being an ion with a 2+ valance selected from the group of elements consisting of Sr and Ba with z ranging from 0 to 20 mol % and the portions of Sn, Zr, and Ti varying over the ranges indicated in (1) above;
- with R being an ion with 3+ valance selected from the group of elements consisting of La, Ce, Pr, Nd, Pm, Sm, Eu, Gd, Tb, Dy, Ho, Er, Tm, Yb and Lu;
- t ranging from 0 to 10 mol %;
- and C ranging from 0 to 1.
17 more elements
Dependencies are inferred from the claim text.