Method for maskless particle-beam exposure
AssigneeIMS Nanofabrication GmbH
InventorsHeinrich Fragner, Elmar Platzgummer
Life of this patent
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Abstract
For maskless irradiating a target with a beam of energetic electrically charged particles using a pattern definition means with a plurality of apertures and imaging the apertures in the pattern definition means onto a target which moves (v) relative to the pattern definition means laterally to the axis, the location of the image is moved along with the target, for a pixel exposure period within which a distance of relative movement of the target is covered which is at least a multiple of the width (w) of the aperture images as measured on the target, and after said pixel exposure period the location of the beam image is changed, which change of location generally compensates the overall movement of the location of the beam image.
Claims22
A method for irradiating a target with a beam of energetic electrically charged particles, comprising:
- providing a pattern definition means having a plurality of apertures transparent to said particles,
- illuminating said pattern definition means by said beam, which traverses the pattern definition means through said apertures thus forming a patterned beam (pb) having a corresponding plurality of beamlets,
- forming said patterned beam into an image on the location of the target, said image comprising the images of at least part of the plurality of apertures, said images of apertures having a first width (w), and
- moving said target relative to the pattern definition means along a path within an image plane in which the images of apertures are formed, wherein
- during pixel exposure periods the location of said beam image is moved along with the target, the pixel exposure periods having a duration within which the relative movement of the target covers a distance of advance greater than the first width as measured on the target, and
- after said pixel exposure periods the location of said beam image is changed with respect to the target, said change of location generally compensating the movement of the location of the beam image during the pixel exposure periods with regard to the location of the pattern definition means.
Dependencies are inferred from the claim text.