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US 7,773,365 B2Granted
Dielectric material
AssigneeHewlett-Packard Development Company, L.P.
InventorsGregory S. Herman, Peter Mardilovich, Douglas Keszler, Jeremy Anderson
Life of this patent
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Abstract
One embodiment of a dielectric material may include a metal containing cation and a polyatomic anion.
Claims36
A dielectric material, comprising:
- a metal containing cation including one or more oxides, sub-oxides and sub-oxy-hydroxides;
- and
- a polyatomic anion including one or more of sulfate (SO42−), borate (BO33−), and phosphate (PO43−);
- wherein said dielectric material is amorphous;
- and wherein said dielectric material comprises a film in an electronic component, said electronic component including one or more of a field effect transistor and a capacitor.
2 more elements
A process of forming a dielectric film, comprising:
- providing a metal containing cation that includes one or more of hafnium suboxide (HfO2+), zirconium suboxide (ZrO2+), titanium suboxide (TiO2+), tantalum suboxide (TaO3+), yttrium suboxide (YO+), niobium suboxide (NbO3+), molybdenum suboxide (MoO4+), tungsten suboxide (WO4+), aluminum suboxide (AlO+), gallium suboxide (GaO+), and suboxides of the lanthanide series;
- providng a polyatomic anion including one or more of sulfate (SO42−), borate (BO33−), and phosphate (PO43−);
- reacting said polyatomic anion and said metal containing cation to form a precursor solution;
- and
- printing said precursor solution on a substrate through an inkjet printhead to form an amorphous dielectric film.
2 more elements
A process of depositing a dielectric film, comprising:
- providing a metal containing cation that includes one or more of hafnium suboxide (HfO2+), zirconium suboxide (ZrO2+),titanium suboxide (TiO2+),tantalum suboxide (TaO3+), yttrium suboxide (YO+), niobium suboxide (NbO3+), molybdenum suboxide (MoO4+), tungsten suboxide (WO4+), aluminum suboxide (AlO+), gallium suboxide (GaO+), and suboxides of the lanthanide series;
- providing a polyatomic anion including one or more of sulfate (SO42−), borate (BO33−), and phosphate (PO43−);
- reacting said polyatomic anion with said metal containing cation to form a precursor solution;
- and
- applying said precursor solution on a substrate by an application chosen from the group including spin-coating, dip-coating, spray-coating, and inkjet printing to form a non-crystalline dielectric film.
2 more elements
A method of depositing a dielectric film, comprising:
- reacting a polyatomic anion with a metal containing cation to form a liquid solution;
- and
- printing said liquid solution on a substrate through a nozzle to form an amorphous dielectric film;
- wherein said metal containing cation includes one or more of hafnium suboxide (HfO2+), zirconium suboxide (ZrO2+),titanium suboxide (TiO2+),tantalum suboxide (TaO3+), yttrium suboxide (YO+), niobium suboxide (NbO3+), molybdenum suboxide (MoO4+), tungsten suboxide (WO4+), aluminum suboxide (AlO+), gallium suboxide (GaO+), and suboxides of the lanthanide series and wherein said polyatomic anion includes one or more of sulfate (SO42−), borate (BO33−), and phosphate (PO43−).
1 more element
An electronic device including a dielectric film, wherein said dielectric film is manufactured from components comprising:
- a metal containing cation that includes one or more of hafnium suboxide (HfO2+), zirconium suboxide (ZrO2+),titanium suboxide (TiO2+),tantalum suboxide (TaO3+), yttrium suboxide (YO+), niobium suboxide (NbO3+), molybdenum suboxide (MoO4+), tungsten suboxide (WO4+), aluminum suboxide (AlO+), gallium suboxide (GaO+), and suboxides of the lanthanide series;
- and
- a polyatomic anion including one or more of sulfate (SO42−), borate (BO33−), and phosphate (PO43−);
- wherein said dielectric film is non-crystalline.
1 more element
Dependencies are inferred from the claim text.