Interferometric condition assessment system for a microelectronic structure including a semiconductor or free-metal material
AssigneeAttofemto, Inc.
InventorPaul Pfaff
Life of this patent
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Abstract
An improved condition testing system and method includes a structure including a semiconductor material with a target portion and a second portion. The target portion has a first feature when at least one of the following occurs: an external force is received by the second portion of the structure and an internal condition occurs in the target portion. The system and method further has a interferogram shaped and located to produce a first optical interference pattern when the target portion and the interferogram are exposed to non-invasive illumination and when the target portion has the first feature. Further implementations use a second test interferogram spaced apart from the first test interferogram.
Claims26
A structure including a semiconductor material comprising:
- a target portion and a second portion different from the target portion, the target portion having a first feature when at least one of the following occurs:
- an external force is received by the second portion of the structure and an internal condition occurs in the target portion;
- and
- an interferogram located to produce a first optical interference pattern when the target portion and the interferogram are exposed to non-invasive illumination and when the target portion has the first feature.
A structure including a semiconductor material, the structure having a thickness, the structure comprising:
- a target portion and a second portion, the target portion having a first feature when at least one of the following occurs:
- an external force is received by the second portion of the structure and an internal condition occurs in the target portion;
- a first interferogram;
- and
- a second interferogram spaced apart through the thickness of the structure from the first grating, the first interferogram and the second interferogram shaped and located to produce a first optical interference pattern when the target portion and the interferograms are exposed to non-invasive illumination and when the target portion has the first feature.
A system comprising:
- a structure including a semiconductor material, the structure including a target portion and a second portion, the target portion having a first feature when at least one of the following occurs:
- an external force is received by the second portion of the structure and an internal condition occurs in the target portion;
- and
- an interferogram positioned apart from the structure, the interferogram shaped and located to produce a first optical interference pattern when the target portion and the interferogram are exposed to non-invasive illumination and when the target portion has the first feature.
A system comprising:
- a structure including a semiconductor material, the structure including a target portion, a second portion, and a first interferogram, the target portion having a first feature when at least one of the following occurs:
- an external force is received by the second portion of the structure and an internal condition occurs in the target portion;
- and
- a second interferogram positioned apart from the structure, the first interferogram and the second interferogram shaped and located to produce a first optical interference pattern when the target portion and the interferograms are exposed to non-invasive illumination and when the target portion has the first feature.
Dependencies are inferred from the claim text.