Plasma processing method and film forming method
AssigneeTokyo Electron Limited
InventorsMasayuki Kohno, Masaru Sasaki
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Abstract
A plasma processing method of carrying out curing processing on a low dielectric constant film produced on a to-be-processed substrate by applying plasma thereto in a processing chamber of a plasma processing apparatus, includes the steps of: a) introducing, in the plasma processing chamber, a first gas having a function of stabilizing plasma and a second gas generating active hydrogen, and, after that; b) generating plasma, and carrying out curing processing on the low dielectric constant film.
Claims13
A plasma processing method for carrying out curing processing on a low dielectric constant film produced on a to-be-processed substrate by applying plasma thereto in a processing chamber of a plasma processing apparatus, comprising the steps of:
- a) introducing, in the plasma processing chamber, a first gas having a function of stabilizing plasma and a second gas generating active hydrogen, both the first gas and the second gas being introduced for a predetermined period of time with no generation of plasma;
- and
- after the predetermined period of time has elapsed, b) generating plasma, and carrying out curing processing on the low dielectric constant film.
A plasma processing method for carrying out curing processing on a low dielectric constant film produced on a to-be-processed substrate by applying plasma thereto in a processing chamber of a plasma processing apparatus, comprising the steps of:
- a) introducing, in the plasma processing chamber, a first gas having a function of stabilizing plasma, and a second gas generating active hydrogen, both the first gas and the second gas being introduced for a predetermined period of time with no generation of plasma;
- and
- after the predetermined period of time has elapsed, b) introducing microwave in the processing chamber with the use of a planar antenna having a plurality of slots, generating plasma of the first gas and the second gas, and carrying out curing processing on the low dielectric constant film.
A film forming method comprising the steps of:
- a) forming a low dielectric constant film on a to-be-processed substrate in a manner of plasma CVD;
- and
- b) carrying out curing processing on the low dielectric constant film by causing plasma to function thereto, wherein:
- said step b) comprises the steps of:
- b1) introducing, in a plasma processing chamber, a first gas having a function of stabilizing plasma, and a second gas generating active hydrogen, both the first gas and the second gas being introduced for a predetermined period of time with no generation of plasma, and,
- after the predetermined period of time has elapsed b2) generating plasma in a processing chamber, and carrying out curing processing on the low dielectric constant film.
Dependencies are inferred from the claim text.