Method for fabricating semiconductor chip
AssigneePanasonic Corporation
InventorsKiyoshi Arita, Hiroshi Haji
Life of this patent
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Abstract
After a film layer 6 formed from a die attach film 4 and a UV tape 5 has been provided as a mask on a semiconductor wafer 1, boundary trenches 7 for partitioning semiconductor elements 2 formed on a circuit pattern formation surface 1a are formed in the film layer 6, thereby making a surface 1c of a semiconductor wafer 1 exposed. The exposed surface 1c of the semiconductor wafer 1 in the boundary trenches 7 is etched by means of plasma of a fluorine-based gas, and the semiconductor wafer 1 is sliced into semiconductor chips 1′ along the boundary trenches 7.
Claims7
A method for fabricating a semiconductor chip, comprising:
- a masking step of providing a mask, on a mask formation surface opposite a circuit pattern formation surface of a semiconductor wafer, a film layer formed from a die attach film to be fixed to the mask formation surface and a heat-resistant film to be affixed to an exterior surface of the die attach film, wherein the die attach film is a film-shape adhesive;
- a boundary trench forming step of forming, in the film layer provided on the semiconductor wafer, boundary trenches for portioning semiconductor elements formed on the circuit formation pattern formation surface of the semiconductor wafer, to thus make a surface of the semiconductor wafer exposed through the boundary trenches;
- and
- a plasma etching step of etching the surface of the semiconductor wafer exposed through the boundary trenches by means of plasma of a fluorine-based gas, to thus separate the semiconductor wafer into semiconductor chips along the boundary trenches.
Dependencies are inferred from the claim text.