Inclusion free cadmium zinc tellurium and cadmium tellurium crystals and associated growth method

A method of making a crystal, comprising:

• synthesizing CdZnTe polycrystalline material using a two-temperature vapor transport method;
• weighing from about 4N to about 7N purities of Cd, Zn, and Te in accordance with the stoichiometry of CdZnTe;
• obtaining an inverted growth reactor chamber configured to grow inclusion free crystals;
• loading the CdZnTe polycrystalline materials into the inverted growth reactor chamber for single-crystal growth;
• filling a seed pocket, inverted growth reactor chamber, and long thin section of the inverted growth reactor chamber with CdZnTe melt;
• heating the inverted growth reactor chamber;
• and
• cooling the CdZnTe melt in the inverted growth reactor chamber slowly to room temperature.

One of cadmium zinc tellurium (CZT) and cadmium tellurium (CdTe) crystals substantially free of inclusions formed by the process comprising the steps of:

• providing an inverted growth reactor chamber for growing one of CZT and CdTe crystals;
• preparing the inverted growth reactor chamber for growing one of CZT and CdTe crystals wherein this preparing step further comprises:
• positioning raw material comprising one of CZT and CdTe in the inverted growth reactor chamber;
• filling the inverted growth reactor chamber with a solvent fluid;
• and
• pressurizing the inverted growth reactor chamber such that the solvent fluid becomes supercritical;
• heating the inverted growth reactor chamber;
• cooling the inverted growth reactor chamber thereby growing one of CZT and CdTe crystals;
• and
• removing the one of CZT and CdTe crystals from the inverted growth reactor chamber.