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US 7,754,584 B2Granted
Semiconductor substrate, and semiconductor device and method of manufacturing the semiconductor device
AssigneePanasonic Corporation
InventorTakahiro Kumakawa
Life of this patent
Estimating the term…
Abstract
In a semiconductor substrate 1, a plurality of semiconductor elements 2 having diaphragm structures are formed in the form of cells in the longitudinal direction and the lateral direction, and V-grooves 3 are formed by anisotropic etching continuously on only division lines 4 parallel formed in one direction, out of the division lines 4 which are orthogonal to each other and divide the respective semiconductor elements 2 individually.
Claims11
A method of manufacturing a semiconductor device comprising the steps of:
- setting a division line in a first direction and a second direction intersecting each other for individually dividing a plurality of semiconductor elements formed on a semiconductor substrate to form a groove by etching on the first direction division line, out of the division lines in the first direction and second direction surrounding said semiconductor elements;
- forming a modified region inside the semiconductor substrate by irradiating laser light along the groove on the first direction division line and along the second direction division line;
- and
- dividing the semiconductor substrate along the first and second direction division lines to form individual semiconductor devices,
- wherein the groove has no intersecting pattern.
2 more elements
A method of manufacturing a semiconductor device comprising the steps of:
- setting a division line in a first direction and a second direction intersecting each other for individually dividing a plurality of semiconductor elements formed on a semiconductor substrate to form a groove by etching on the first direction division line, out of the division lines in the first direction and second direction surrounding said semiconductor elements;
- forming a modified region inside the semiconductor substrate by irradiating laser light along the first and second direction division lines;
- and
- dividing the semiconductor substrate along the first and second direction division lines to form individual semiconductor devices,
- wherein the groove has no intersecting pattern, and
- wherein in the step of forming a modified region inside the semiconductor substrate, the number of times of scanning laser light along the direction division lines where the grooves are formed is less than the number of times of scanning the laser light along the division lines where no groove is formed.
3 more elements
Dependencies are inferred from the claim text.