Method of treating a semiconductor substrate
AssigneeKabushiki Kaisha Toshiba
InventorsHiroshi Tomita, Tatsuhiko Koide, Hisashi Okuchi, Kentaro Shimayama, Hiroyasu Iimori, Linan Ji
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Abstract
A method of treating a semiconductor substrate has forming convex patterns over the semiconductor substrate by dry etching, cleaning and modifying a surface of the convex patterns by using chemical, forming a hydrophobic functional surface on the modified surface of the convex patterns, after forming the hydrophobic functional surface, rinsing the semiconductor substrate by using water, drying the semiconductor substrate, and removing the hydrophobic functional group from the hydrophobic functional surface of the convex patterns.
Claims24
A method of treating a semiconductor substrate comprising:
- forming convex patterns over the semiconductor substrate by dry etching;
- cleaning and modifying a surface of the convex patterns by using chemical;
- forming a water repellent protective film on the modified surface of the convex patterns;
- after forming the water repellent protective film, rinsing the semiconductor substrate by using water;
- drying the semiconductor substrate;
- and
- removing the water repellent protective film, leaving the convex patterns.
A method of treating a semiconductor substrate comprising:
- forming convex patterns over the semiconductor substrate by dry etching;
- cleaning a surface of the convex patterns by using first chemical;
- modifying the surface of the convex patterns by using second chemical;
- forming a water repellent protective film on the modified surface of the convex patterns;
- after forming the water repellent protective film, rinsing the semiconductor substrate by using water;
- drying the semiconductor substrate;
- and
- removing the water repellent protective film, leaving the convex patterns.
Dependencies are inferred from the claim text.