Two-layer film for next generation damascene barrier application with good oxidation resistance
AssigneeApplied Materials, Inc.
InventorsYi Zheng, Srinivas D. Nemani, Li-Qun Xia
Life of this patent
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Abstract
A method is provided for processing a substrate including providing a processing gas comprising an organosilicon compound comprising a phenyl group to the processing chamber, and reacting the processing gas to deposit a low k silicon carbide barrier layer useful as a barrier layer in damascene or dual damascene applications with low k dielectric materials. A method is provided for depositing a silicon carbide cap layer that has substantially no phenyl groups attached to silicon atoms from a processing gas comprising an oxygen-free organosilicon compound on a low k silicon carbide barrier layer.
Claims31
A method for processing a substrate, comprising:
- forming a barrier layer in a dual damascene structure, wherein the barrier layer is directly formed on a substrate surface comprising metal features, and the forming comprises:
- depositing a silicon carbide barrier layer on the substrate by introducing a first processing gas mixture comprising dimethylphenylsilane and a nitrogen containing compound into a processing chamber, and reacting the first processing gas mixture to deposit the silicon carbide barrier layer, wherein the silicon carbide barrier layer has a dielectric constant of less than 4;
- and
- depositing a silicon carbide cap layer directly on the silicon carbide barrier layer by introducing a second processing gas mixture comprising trimethylsilane into the processing chamber, and reacting the second processing gas mixture to deposit the silicon carbide cap layer in the processing chamber, wherein the silicon carbide cap layer has a thickness between about 50 Å to about 100 Å.
A method for processing a substrate, comprising:
- forming a barrier layer in a dual damascene structure, wherein the barrier layer is directly formed on a substrate surface comprising metal features, and the forming comprises:
- depositing a silicon carbide barrier layer on the substrate by introducing a first processing gas mixture comprising dimethylphenylsilane and a dopant component containing nitrogen into a processing chamber and reacting the first processing gas mixture to deposit the silicon carbide barrier layer, wherein the silicon carbide barrier layer has a dielectric constant of less than 4;
- and
- depositing a silicon carbide cap layer directly on the silicon carbide barrier layer by introducing a second processing gas mixture comprising trimethylsilane into the processing chamber, and reacting the second processing gas mixture to deposit the silicon carbide cap layer in the processing chamber, wherein the silicon carbide cap layer comprises nitrogen, and the silicon carbide cap layer has a thickness between about 50 Å to about 100 Å.
A method for processing a substrate, comprising:
- forming a barrier layer in a dual damascene structure, wherein the barrier layer is directly formed on a substrate surface comprising metal features, and the forming comprises:
- depositing a silicon carbide barrier layer on the substrate by introducing a first processing gas mixture comprising dimethylphenylsilane and a nitrogen containing gas into a processing chamber and reacting the first processing gas mixture to deposit the silicon carbide barrier layer, wherein the silicon carbide barrier layer has a dielectric constant of less than 4;
- and
- depositing a silicon carbide cap layer directly on the barrier layer by introducing a second processing gas mixture comprising trimethylsilane and ammonia into the processing chamber, and reacting the second processing gas mixture to deposit the silicon carbide cap layer in the processing chamber, wherein the silicon carbide cap layer comprises nitrogen, and the silicon carbide cap layer has a thickness between about 50 Å to about 100 Å.
Dependencies are inferred from the claim text.