# US 7,746,398 B2 · Wide dynamic range active pixel with knee response

> Agents: this data is available as JSON from the patentgrep API and MCP server — see https://patentgrep.com/llms.txt

- Number: US 7,746,398 B2
- Document ID: US7746398B2
- Status: Granted
- Kind: B2
- Application number: 11/709,702
- Filed: 2007-02-23
- Published: 2007-07-12
- Granted: 2010-06-29
- Earliest claimed: 2003-05-08
- Assignees: Micron Technology, Inc.
- Inventors: Isao Takayanagi
- Web page: https://patentgrep.com/patent/US7746398B2

## CPC

- H04N 25/59: by controlling the amount of charge storable in the pixel, e.g. modification of the charge conversion ratio of the floating node capacitance
- H04N 25/575: {with a response composed of multiple slopes}
- H04N 25/77: Pixel circuitry, e.g. memories, A/D converters, pixel amplifiers, shared circuits or shared components
- H04N: PICTORIAL COMMUNICATION, e.g. TELEVISION

## Abstract

A pixel circuit, and a method for operating a pixel circuit, to provide a multiple knee response characteristic. In one embodiment a pixel circuit comprises a photoconversion device for accumulating charge during a first integration period and second integration period, an integration node connected to the photoconversion device, a first transistor having one terminal connected to said integration node and another terminal connected to a reset signal line and a feed-through pulse capacitor. The feed-through pulse capacitor has one terminal coupled to a feed-through pulse signal line, and a second terminal coupled to the integration node, said feed-through pulse signal line providing an intermediate pulse between the first and second integration periods to generate an overflow current in said the transistor.

## Claims

### Claim 1

A pixel circuit, comprising:
a photoconversion device for accumulating charge during a first integration period and second integration period;
an integration node, connected to said photoconversion device;
a first transistor, having one terminal connected to said integration node and another terminal connected to a reset signal line;
a feed-through pulse capacitor, having one terminal coupled to a feed-through pulse signal line, and a second terminal coupled to said integration node, said feed-through pulse signal line providing an intermediate pulse between said first and second integration periods to generate an overflow current in said first transistor.

### Claim 2 (depends on 1)

The pixel circuit of claim 1, wherein said photoconversion device is a photodiode.

### Claim 3 (depends on 1)

The pixel circuit of claim 1, wherein the first transistor has a gate coupled to a supply voltage.

### Claim 4 (depends on 1)

The pixel circuit of claim 1, wherein said reset signal line and said feed-through pulse line are operable to apply a reset voltage to said integration node.

### Claim 5 (depends on 4)

The pixel circuit of claim 4, further comprising an output circuit to read out said reset voltage to an output line.

### Claim 6 (depends on 1)

The pixel circuit of claim 1, wherein a pixel select line coupled to the integration node, is operable to begin a first charge integration period.

### Claim 7 (depends on 6)

The pixel circuit of claim 6, wherein said pixel select line is operable to begin a second charge integration period following said first integration period.

### Claim 8

An imaging device, comprising:
a semiconductor substrate;
an array of pixels formed on said substrate, each pixel having a pixel circuit comprising:
a photoconversion device for accumulating a charge at an integration node;
a transfer transistor, having one source/drain terminal connected to said integration node and another source/drain terminal connected to a reset line;
an output circuit, connected to said integration node; and
a feed-through pulse capacitor, having one terminal coupled to a feed-through pulse signal line, and a second terminal coupled to said integration node, said feed-through pulse signal line producing an intermediate pulse that interrupts a charge integration period to create a first charge integration period and a second charge integration period.

### Claim 9 (depends on 8)

The imaging device of claim 8, wherein said transfer transistor produces overflow current between said first and second charge integration periods in response to said intermediate pulse.

### Claim 10 (depends on 8)

The imaging device of claim 8, wherein said photoconversion device is a photodiode.

### Claim 11 (depends on 8)

The imaging device of claim 8, wherein said transfer transistor has a gate coupled to a supply voltage.

### Claim 12 (depends on 8)

The imaging device of claim 8, wherein said reset signal line and said feed-through pulse line are operable to apply a reset voltage to said integration node.

### Claim 13 (depends on 12)

The imaging device of claim 12, wherein said output circuit reads out said reset voltage to an output line.

### Claim 14

An imaging system, comprising:
a plurality of pixels arranged in rows and columns, each pixel being associated with a column line, each pixel having a pixel circuit comprising:
a photodiode for accumulating charge during a first integration period and second integration period, said device being connected to an integration node;
a first transistor, having one terminal connected to said integration node and another terminal connected to a reset line;
an output circuit, connected to said integration node, for reading out a signal at said integration node; and
a feed-through pulse capacitor, having one terminal coupled to a feed-through pulse signal line, and a second terminal coupled to said integration node;
wherein an excess charge overflows through said first transistor in response to an intermediate pulse generated by said feed-through pulse signal line.

### Claim 15 (depends on 14)

The imaging system of claim 14, wherein said excess charge overflows when a photocurrent present at said integration node after said first integration period exceeds a predetermined threshold.

### Claim 16 (depends on 14)

The imaging system of claim 14, wherein the first transistor has a gate coupled to a supply voltage.

### Claim 17 (depends on 14)

The imaging system of claim 14, wherein said reset signal line and said feed-through pulse line are operable to apply a reset voltage to said integration node.

### Claim 18 (depends on 17)

The imaging system of claim 17, wherein said output circuit further comprises a second transistor for reading out said reset voltage to an output line.
