# US 7,746,333 B2 · Semiconductor device > Agents: this data is available as JSON from the patentgrep API and MCP server — see https://patentgrep.com/llms.txt - Number: US 7,746,333 B2 - Document ID: US7746333B2 - Status: Granted - Kind: B2 - Application number: 11/619,035 - Filed: 2007-01-02 - Published: 2007-05-17 - Granted: 2010-06-29 - Earliest claimed: 2003-02-12 - Assignees: Semiconductor Energy Laboratory Co., Ltd. - Inventors: Shunpei Yamazaki; Toru Takayama; Junya Maruyama; Yuugo Goto; Yumiko Ohno; Yasuyuki Arai; Noriko Shibata - Web page: https://patentgrep.com/patent/US7746333B2 ## CPC - H10P 90/1914: {using bonding} - G02F 1/13452: {Conductors connecting driver circuitry and terminals of panels} - H10D 30/6731: {Top-gate only TFTs} - H10D 30/6745: {Polycrystalline or microcrystalline silicon} - H10D 86/0214: {using temporary substrates} - H10D 86/0223: {comprising crystallisation of amorphous, microcrystalline or polycrystalline semiconductor materials} - H10D 86/40: characterised by multiple TFTs - H10D 86/421: {having a particular composition, shape or crystalline structure of the active layer} - H10D 86/441: {Interconnections, e.g. scanning lines} - H10D 86/60: wherein the TFTs are in active matrices - H10H 29/10: Integrated devices comprising at least one light-emitting semiconductor component covered by group H10H20/00 (active-matrix LED displays H10H29/30) - H10K 50/11: characterised by the electroluminescent [EL] layers - H10K 50/15: Hole transporting layers - H10K 50/16: Electron transporting layers - H10K 50/171: {Electron injection layers} - H10K 59/123: Connection of the pixel electrodes to the thin film transistors [TFT] - H10K 59/126: Shielding, e.g. light-blocking means over the TFTs - H10K 59/131: Interconnections, e.g. wiring lines or terminals - H10K 71/50: Forming devices by joining two substrates together, e.g. lamination techniques - H10K 71/80: using temporary substrates - H10P 72/0464: {characterised by the construction of the transfer chamber} - H10P 72/0468: {comprising a chamber adapted to a particular process} - H10P 72/0478: {the substrates being processed being not semiconductor wafers, e.g. leadframes or chips} - H10P 72/74: {using temporarily an auxiliary support} - H10W 10/181: {Semiconductor-on-insulator [SOI] isolation regions, e.g. buried oxide regions of SOI wafers} - H10W 90/00: Package configurations - G02F 1/13306: {Circuit arrangements or driving methods for the control of single liquid crystal cells (G02F1/132, G02F1/133382 take precedence)} - G02F 1/1339: Gaskets; Spacers; Sealing of cells - G02F 1/1341: Filling or closing of cells - G02F 1/134309: {characterised by their geometrical arrangement} - G02F 1/13439: {characterised by their electrical, optical, physical properties; materials therefor; method of making} - G02F 1/13454: {Drivers integrated on the active matrix substrate (G02F1/136277 takes precedence)} - G02F 1/13456: {Cell terminals located on one side of the display only} - G02F 1/1368: in which the switching element is a three-electrode device {(G02F1/136277 takes precedence)} - G02F 2202/28: Adhesive materials or arrangements - H10K 59/1201: {Manufacture or treatment} - H10K 2102/103: {comprising indium oxides, e.g. ITO} - H10K 2102/3031: {Two-side emission, e.g. transparent OLEDs [TOLED]} - H10P 72/7434: {used in a transfer process involving at least two transfer steps, i.e. including an intermediate handle substrate} - H10W 72/07251: {characterised by changes in properties of the bump connectors during connecting} - H10W 72/20: Bump connectors, e.g. solder bumps or copper pillars; Dummy bumps; Thermal bumps - H10W 72/244: {relative to underlying supporting features, e.g. bond pads, RDLs or vias} - H10W 72/823: {Interconnections through encapsulations, e.g. pillars through molded resin on a lateral side a chip} - H10W 72/9226: {with via interconnections} - H10W 72/923: {Bond pads having multiple stacked layers} - H10W 72/942: {relative to underlying supporting features, e.g. bond pads, RDLs or vias} - H10W 90/20: Configurations of stacked chips - H10W 90/291: {characterised by containers, encapsulations, or other housings for the stacked chips} - H10W 90/722: {between stacked chips} - H10P: GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10 - G02F: OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS - H10D: INORGANIC ELECTRIC SEMICONDUCTOR DEVICES - H10H: INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS - H10K: ORGANIC ELECTRIC SOLID-STATE DEVICES - H10W: GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10 ## Abstract The present invention intends to realize a narrow frame of a system on panel. In addition to this, a system mounted on a panel is intended to make higher and more versatile in the functionality. In the invention, on a panel on which a pixel portion (including a liquid crystal element, a light-emitting element) and a driving circuit are formed, integrated circuits that have so far constituted an external circuit are laminated and formed. Specifically, of the pixel portion and the driving circuit on the panel, on a position that overlaps with the driving circuit, any one kind or a plurality of kinds of the integrated circuits is formed by laminating according to a transcription technique. ## Claims ### Claim 1 A semiconductor device comprising: a first substrate; a pixel portion over the first substrate; a second substrate over the pixel portion; a driving circuit over the first substrate; and a layer comprising an integrated circuit, wherein the layer at least partially overlaps with the driving circuit, wherein the driving circuit and the layer are electrically connected via a bump, and wherein the second substrate does not overlap the driver circuit. ### Claim 2 (depends on 1) The semiconductor device according to claim 1, further comprising a display element that is a light emitting element. ### Claim 3 (depends on 1) The semiconductor device according to claim 1, wherein the pixel portion further comprising a thin film transistor between the first substrate and the second substrate. ### Claim 4 (depends on 1) The semiconductor device according to claim 1, wherein the driving circuit is a source signal line driving circuit. ### Claim 5 (depends on 1) The semiconductor device according to claim 1, wherein the bump comprises at least one of tungsten, tungsten-rhenium, palladium, beryllium copper. ### Claim 6 (depends on 1) The semiconductor device according to claim 1, wherein the integrated circuit comprises at least one of a display controller, a frame memory and a power source circuit. ### Claim 7 (depends on 1) An electronic device comprising the semiconductor device according to claim 1, wherein the electronic device is any one of a group comprising a display device, a notebook type personal computer, a mobile computer, a player with a recording medium, an electronic book, a video camera, a portable telephone, a digital camera, a head-mount display, a car navigation system, a projector and a car stereo. ### Claim 8 A semiconductor device comprising: a first substrate; a pixel portion over the first substrate; a second substrate over the pixel portion; a driving circuit over the first substrate; and a layer comprising an integrated circuit, wherein the layer at least partially overlaps with the driving circuit, wherein the driving circuit and the layer are electrically connected via a bump, wherein the second substrate does not overlap the driver circuit, and wherein the integrated circuit comprises a CPU. ### Claim 9 (depends on 8) The semiconductor device according to claim 8, further comprising a display element that is a light emitting element. ### Claim 10 (depends on 8) The semiconductor device according to claim 8, wherein the pixel portion further comprising a thin film transistor between the first substrate and the second substrate. ### Claim 11 (depends on 8) The semiconductor device according to claim 8, wherein the driving circuit is a source signal line driving circuit. ### Claim 12 (depends on 8) The semiconductor device according to claim 8, wherein the bump comprise at least one of tungsten, tungsten-rhenium, palladium, beryllium copper. ### Claim 13 (depends on 8) The semiconductor device according to claim 8, wherein the integrated circuit further comprises at least one of a display controller, a frame memory and a power source circuit. ### Claim 14 (depends on 8) An electronic device comprising the semiconductor device according to claim 8, wherein the electronic device is any one of a group comprising a display device, a notebook type personal computer, a mobile computer, a player with a recording medium, an electronic book, a video camera, a portable telephone, a digital camera, a head-mount display, a car navigation system, a projector and a car stereo. ### Claim 15 A semiconductor device comprising: a first substrate; a pixel portion over the first substrate; a second substrate over the pixel portion; a driving circuit over the first substrate; and a layer comprising an integrated circuit, wherein the layer at least partially overlaps with the driving circuit, wherein the driving circuit and the layer are electrically connected via a bump, wherein the second substrate does not overlap the driver circuit, and wherein the integrated circuit comprises a memory. ### Claim 16 (depends on 15) The semiconductor device according to claim 15, further comprising a display element that is a light emitting element. ### Claim 17 (depends on 15) The semiconductor device according to claim 15, wherein the pixel portion further comprising a thin film transistor between the first substrate and the second substrate. ### Claim 18 (depends on 15) The semiconductor device according to claim 15, wherein the driving circuit is a source signal line driving circuit. ### Claim 19 (depends on 15) The semiconductor device according to claim 15, wherein the bump comprises at least one of tungsten, tungsten-rhenium, palladium, beryllium copper. ### Claim 20 (depends on 15) The semiconductor device according to claim 15, wherein the integrated circuit further comprises at least one of a display controller, a frame memory and a power source circuit. ### Claim 21 (depends on 15) An electronic device comprising the semiconductor device according to claim 15, wherein the electronic device is any one of a group comprising a display device, a notebook type personal computer, a mobile computer, a player with a recording medium, an electronic book, a video camera, a portable telephone, a digital camera, a head-mount display, a car navigation system, a projector and a car stereo. ### Claim 22 A semiconductor device comprising: a first substrate; a pixel portion over the first substrate; a second substrate over of the pixel portion; a driving circuit over the first substrate; a first layer comprising a first integrated circuit, a second layer comprising a second integrated circuit, wherein the first layer at least partially overlaps with the driving circuit, wherein the second layer at least partially overlaps with the first layer, wherein the driving circuit and the first layer are electrically connected via a bump, wherein the first layer and the second layer are electrically connected via an auxiliary wiring, and wherein the second substrate does not overlap the driver circuit. ### Claim 23 (depends on 22) The semiconductor device according to claim 22, further comprising a display element that is a light emitting element. ### Claim 24 (depends on 22) The semiconductor device according to claim 22, wherein the pixel portion further comprising a thin film transistor between the first substrate and the second substrate. ### Claim 25 (depends on 22) The semiconductor device according to claim 22, wherein the driving circuit is a source signal line driving circuit. ### Claim 26 (depends on 22) The semiconductor device according to claim 22, wherein the bump comprises at least one of tungsten, tungsten-rhenium, palladium, beryllium copper. ### Claim 27 (depends on 22) The semiconductor device according to claim 22, wherein the integrated circuit comprises at least one of a display controller, a frame memory and a power source circuit. ### Claim 28 (depends on 22) The semiconductor device according to claim 22, wherein the electronic device is any one of a group comprising a display device, a notebook type personal computer, a mobile computer, a player with a recording medium, an electronic book, a video camera, a portable telephone, a digital camera, a head-mount display, a car navigation system, a projector and a car stereo.