# US 7,746,174 B2 · Systems and methods for power amplifier with integrated passive device > Agents: this data is available as JSON from the patentgrep API and MCP server — see https://patentgrep.com/llms.txt - Number: US 7,746,174 B2 - Document ID: US7746174B2 - Status: Granted - Kind: B2 - Application number: 12/138,188 - Filed: 2008-06-12 - Published: 2009-12-17 - Granted: 2010-06-29 - Earliest claimed: 2008-06-12 - Assignees: Samsung Electro-Mechanics Co., Ltd. - Inventors: Ki Seok Yang; Jaejoon Chang; Kyu Hwan An; Wangmyong Woo; Chang-Ho Lee; Younsuk Kim; Hyogun Bae; Kijoong Kim; Shinichi Iizuka - Web page: https://patentgrep.com/patent/US7746174B2 ## CPC - H03F 3/211: {using a combination of several amplifiers (H03F3/60 takes precedence)} - H03F 3/195: in integrated circuits - H10W 44/20: at high-frequency [HF] or radio frequency [RF] - H03F 2200/451: the amplifier being a radio frequency amplifier - H03F 2200/537: A transformer being used as coupling element between two amplifying stages - H03F 2200/541: Transformer coupled at the output of an amplifier - H03F 2203/21142: Output signals of a plurality of power amplifiers are parallel combined to a common output - H10W 44/226: {for HF amplifiers} - H10W 44/248: {for antennas} - H10W 72/50: Bond wires - H10W 72/552: {comprising metals or metalloids, e.g. silver} - H10W 72/5522: {comprising gold [Au]} - H10W 72/5524: {comprising aluminium [Al]} - H10W 72/5525: {comprising copper [Cu]} - H10W 90/759: {between a chip and a laterally-adjacent discrete passive device} - H03F: AMPLIFIERS - H10W: GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10 ## Abstract Embodiments of the invention may provide for systems and methods for providing a power amplifier with integrated passive device, thereby improving the performance of the power amplifier. The power amplifier may include a signal amplification section, a power combining section, and a coupling device section that interconnects the signal amplification section and the power combining section. The signal amplification section may be implemented on a first substrate, and the power combining section may be implemented on a second substrate, where the first substrate and the second substrate may be different. The power combining section may be implemented by the integrated passive device (IPD) that may have characteristics of high performance passive device with flexibility of implementing diverse functions, including a notch filter, a low pass filter, and/or bypass capacitance for bias network. The power combining section implemented by the integrated passive device may have an improved power combining efficiency. ## Claims ### Claim 1 A power amplifier, comprising: a signal amplification section that includes a plurality of power devices, wherein the signal amplification section receives an input radio frequency (RF) signal, wherein the plurality of power devices are operative to amplify the input RF signal to generate a respective plurality of amplified signals, wherein the signal amplification section is provided on a first substrate; a signal combining section that is operative to combine the plurality of amplified signals into an output signal for delivery to a load, the signal combining section comprising a resistive substrate, a dielectric layer, and one or more metal layers deposited between the resistive substrate and the dielectric layer, the one or more metal layers patterned to form at least a plurality of primary windings inductively coupled to a single secondary winding, each primary winding coupled to a respective one of the plurality of power devices, wherein the single secondary winding is interleaved with the plurality of primary windings, the single secondary winding including a number of turns N2 such that N2>1, wherein the signal combining section is provided as an integrated passive device that is physically distinct from the first substrate; and a coupling device section that electrically connects the signal amplification section of the first substrate and the signal combining section provided as the integrated passive device. ### Claim 2 (depends on 1) The power amplifier of claim 1, wherein each primary winding receives a respective one of the plurality of plurality of amplified signals from the respective power device; and wherein the secondary winding is operative to provide the output signal for delivery to the load. ### Claim 3 (depends on 1) The power amplifier of claim 1, wherein the plurality of power devices are selectively operable. ### Claim 4 (depends on 1) The power amplifier of claim 1, wherein signal amplification section includes a balun, and wherein the power devices comprise a first driver amplifier, a plurality of second driver amplifiers, and a plurality of power amplifiers. ### Claim 5 (depends on 4) The power amplifier of claim 4, wherein the input RF signal is a single-ended input signal, wherein the balun is operative to convert the single-ended input signal to differential signal outputs, wherein the first driver amplifier is operative to amplify the differential signal outputs to generate first amplified signal outputs, wherein each of the plurality of second driver amplifiers are operative to further amplify the first amplified signal outputs to generate a plurality of respective second amplified signal outputs, wherein each of the plurality of respective second amplified signal outputs is provided to a respective one of the plurality of power amplifiers to generate the respective plurality of amplified signals. ### Claim 6 (depends on 1) The power amplifier of claim 1, wherein the signal combining section is further operative to provide one or more of (i) harmonic rejection, (ii) power monitoring, or (iii) impedance transformation between the signal amplification section and the load. ### Claim 7 (depends on 1) The power amplifier of claim 1, wherein the signal combining section comprises (i) at least one wire in accordance with a wire bond connection or (ii) at least one solder bump in accordance with a flip-chip connection. ### Claim 8 (depends on 1) The power amplifier of claim 1, wherein the signal combining section includes a base substrate, a plurality of metal layers supported by the base substrate, at least one dielectric layer separating at least two of the plurality of metal layers, and at least one via hole electrically connecting two of the plurality of metal layers. ### Claim 9 (depends on 8) The power amplifier of claim 8, wherein the base substrate comprises at least one of (i) Silicon (Si), (ii) Gallium Arsenide (GaAs), (iii) InP, (iv) FR4, or (v) low temperature co-fired ceramic (LTCC). ### Claim 10 (depends on 8) The power amplifier of claim 8, wherein the at least one dielectric layer is an insulator layer having silicon oxide, BCB (Benzo-cyclo-butene), SiN (Silicon-Nitride), FR4, or ceramic. ### Claim 11 (depends on 1) The power amplifier of claim 1, wherein the signal amplification section and the signal combining section are substantially coplanar, and wherein the signal combining section comprises at least one wire connection between the signal amplification section and the signal combining section. ### Claim 12 (depends on 1) The power amplifier of claim 1, wherein the signal amplification section and the signal combining section are stacked opposite each other, wherein the signal combining section comprises at least one solder bump between the signal amplification section and the signal combining section. ### Claim 13 (depends on 1) The power amplifier of claim 1, wherein the signal amplification section is implemented using one or more low-resistance substrates and wherein the signal combining section comprising the resistive substrate and the dielectric layer is implemented using one or more high-resistance substrates.