# US 7,746,125 B2 · High voltage driver circuit with fast slow voltage operation > Agents: this data is available as JSON from the patentgrep API and MCP server — see https://patentgrep.com/llms.txt - Number: US 7,746,125 B2 - Document ID: US7746125B2 - Status: Granted - Kind: B2 - Application number: 10/589,109 - Filed: 2005-02-08 - Published: 2007-07-26 - Granted: 2010-06-29 - Earliest claimed: 2004-02-11 - Assignees: NXP B.V. - Inventors: Maurits M. N. Storms; Bobby J. Daniel - Web page: https://patentgrep.com/patent/US7746125B2 ## CPC - G11C 16/08: Address circuits; Decoders; Word-line control circuits - G11C 8/08: Word line control circuits, e.g. drivers, boosters, pull-up circuits, pull-down circuits, precharging circuits, for word lines - G11C: STATIC STORES (semiconductor memory devices H10B) ## Abstract A high voltage driver circuit for devices such as non-volatile memories, in which a low voltage driver is combined in two different ways with a high voltage driver In one, input-independent embodiment, a low voltage driver (Q7, Q8) is connected directly in parallel with a high voltage driver, thereby providing a high voltage signal path for high voltage operations and a low voltage signal path for low voltage operations. In an alternative, partially input-dependent embodiment, a low voltage driver is connected to the output of a high voltage driver (Q9, Q10), which may comprise a partial level shifter (Q1 B Q6). The output of this low voltage driver (Q9, Q10), which forms the output terminal of the entire stage, has a pull up/pull down transistor (Q11), depending on whether the partial level shifter (Q1 B Q6) is a positive or negative level shifting high voltage driver. ## Claims ### Claim 1 A voltage driver circuit for driving a device at a selected one of a plurality of voltages associated with respective device operations including a high voltage operation and a relatively lower voltage operation, the driver circuit comprising an input (IN), a single output (OUT) for connection to said device, and a plurality of voltage drivers between said input and said output including a high voltage breakdown driver and a relatively lower breakdown voltage driver, wherein said high voltage breakdown driver comprises inverters and said relatively lower breakdown voltage driver comprises an inverter, wherein an output of one of the inverters of said high voltage breakdown driver is connected to an input of the inverter of said relatively lower breakdown voltage driver, the circuit being arranged such that, during a high voltage operation, said high voltage breakdown driver is connected to said output and there is a substantially zero voltage drop across said relatively lower breakdown voltage driver, and, during a relatively lower voltage operation, said relatively lower breakdown voltage driver provides the drive voltage for driving said device, the contribution of said high breakdown voltage driver to said drive voltage during said relatively lower voltage operation being substantially negligible. ### Claim 2 (depends on 1) A circuit according to claim 1, wherein the inverters of said high voltage breakdown driver consist of high voltage breakdown transistors. ### Claim 3 (depends on 2) A circuit according to claim 2, wherein the inverter of said relatively lower breakdown voltage driver consists of relatively lower breakdown voltage transistors. ### Claim 4 (depends on 3) A circuit according to claim 3, wherein source electrodes of some high voltage breakdown transistors and a source electrode of a first relatively lower breakdown voltage transistor are connected to a first voltage line, wherein source electrodes of some other high voltage breakdown transistors and a source electrode of a second relatively lower breakdown voltage transistor are connected to a second voltage line. ### Claim 5 (depends on 1) A circuit according to claim 1, comprising two signal paths between the input and the output, a first signal path consisting of one or more high voltage drivers connected in series, and a second signal path consisting of at least one low voltage driver, the first and second signal paths being connected in parallel to one another. ### Claim 6 (depends on 5) A circuit according to claim 5, comprising means for selecting the first signal path during high voltage operation. ### Claim 7 (depends on 1) A memory device, comprising a voltage driver circuit according to claim 1. ### Claim 8 (depends on 7) An integrated circuit, comprising or including a memory device according to claim 7. ### Claim 9 (depends on 8) A computing system, including an integrated circuit according to claim 8. ### Claim 10 A voltage driver circuit for driving a device at a selected one of a plurality of voltages associated with respective device operations including a high voltage operation and a relatively lower voltage operation, the driver circuit comprising an input (IN), a single output (OUT) for connection to said device, and a plurality of voltage drivers between said input and said output including a high voltage breakdown driver and a relatively lower breakdown voltage driver, wherein the high breakdown voltage driver comprises a voltage level shifter that is connected at the input of the circuit that is between first and second voltage lines and the relatively lower breakdown voltage driver comprises an inverter, wherein an output of said voltage level shifter is connected to an input of the inverter of the relatively lower breakdown voltage driver and the inverter of the relatively lower breakdown voltage driver is connected to the single output, the voltage driver circuit being arranged such that, during a high voltage operation, there is a substantially zero voltage drop across said relatively lower breakdown voltage driver. ### Claim 11 (depends on 10) A circuit according to claim 10, wherein said voltage level shifter comprises a partial level shifter. ### Claim 12 (depends on 10) A circuit according to claim 10 wherein the inverter of said relatively lower breakdown voltage driver consists of thick gate oxide devices. ### Claim 13 (depends on 12) A circuit according to claim 12, wherein the thick gate oxide devices comprise GO2 devices. ### Claim 14 (depends on 12) A circuit according to claim 12, wherein the voltage level shifter comprises transistors, wherein source electrodes of some transistors of the voltage level shifter and a source electrode of a first thick gate oxide device are connected to the first voltage line, wherein source electrodes of some other transistors of the voltage level shifter and a source electrode of a second thick gate oxide device are connected to the second voltage line. ### Claim 15 (depends on 10) A circuit according to claim 10, wherein said relatively lower breakdown voltage driver comprises an I/O protection inverter. ### Claim 16 (depends on 10) A circuit according to claim 10, wherein a high voltage pull-up or pull-down transistor is provided between the output and the first or second voltage lines respectively.