# US 7,746,113 B1 · Circuit structures utilizing multiple voltage level inputs > Agents: this data is available as JSON from the patentgrep API and MCP server — see https://patentgrep.com/llms.txt - Number: US 7,746,113 B1 - Document ID: US7746113B1 - Status: Granted - Kind: B1 - Application number: 12/174,956 - Filed: 2008-07-17 - Granted: 2010-06-29 - Earliest claimed: 2008-07-17 - Assignees: Xilinx, Inc. - Inventors: Steven P. Young - Web page: https://patentgrep.com/patent/US7746113B1 ## CPC - H03K 19/17788: for input/output [I/O] voltages - H03K: PULSE TECHNIQUE (measuring pulse characteristics G01R; modulating sinusoidal oscillations with pulses H03C; transmission of digital information H04L; discriminator circuits detecting phase difference between two signals by counting or integrating cycles of oscillation H03D3/04; automatic control, starting, synchronisation or stabilisation of generators of electronic oscillations or pulses where the type of generator is irrelevant or unspecified H03L; coding, decoding or code conversion, in general H03M) ## Abstract A circuit structure implements a logical AND gate that operates correctly when provided with inputs at two different power-high voltages. The circuit structure includes a pulsed driver circuit operating at a first power high voltage, and an AND logic circuit operating at a second power high voltage higher than the first power high voltage. The pulsed driver circuit has an input operating at the first power high voltage and provides an output operating at the first power high voltage. The first input of the AND logic circuit operates at the second power high voltage, the second input of the AND logic circuit is coupled to the output of the pulsed driver circuit and operates at the first power high voltage, and the output of the AND logic circuit operates at the second power high voltage. An exemplary implementation of the AND logic circuit is described. ## Claims ### Claim 1 A circuit structure, comprising: a pulsed driver circuit operating at a first power high voltage, the pulsed driver circuit having an input operating at the first power high voltage and further having an output operating at the first power high voltage; and an AND logic circuit operating at a second power high voltage higher than the first power high voltage, the AND logic circuit having a first input, a second input coupled to the output of the pulsed driver circuit, and an output, wherein: the first input of the AND logic circuit operates at the second power high voltage; the second input of the AND logic circuit operates at the first power high voltage; and the output of the AND logic circuit operates at the second power high voltage. ### Claim 2 (depends on 1) The circuit structure of claim 1, wherein transistors in the AND logic circuit comprise thicker oxide than transistors in the pulsed driver circuit. ### Claim 3 (depends on 1) The circuit structure of claim 1, wherein the pulsed driver circuit comprises an inverting pulsed driver circuit. ### Claim 4 (depends on 1) The circuit structure of claim 1, wherein the AND logic circuit comprises: a first N-channel transistor coupled between the second input of the AND logic circuit and an internal node, the first N-channel transistor having a gate coupled to the first input of the AND logic circuit; a first P-channel transistor coupled between the internal node and the second power high voltage, the first P-channel transistor having a gate coupled to the first input of the AND logic circuit; a first inverter having an input coupled to the internal node and an output coupled to the output of the AND logic circuit, the first inverter being coupled to the second power high voltage; and a second P-channel transistor coupled between the internal node and the second power high voltage, the second P-channel transistor being gated by the output of the first inverter. ### Claim 5 (depends on 2) The circuit structure of claim 2, wherein the pulsed driver circuit comprises: a second N-channel transistor coupled between the output of the pulsed driver circuit and a ground, the second N-channel transistor being gated by the input of the pulsed driver circuit; third and fourth P-channel transistors coupled in series between the output of the pulsed driver circuit and the first power high voltage, the third P-channel transistor being gated by the Input of the pulsed driver circuit; and second and third inverters coupled in series between the output of the pulsed driver circuit and a gate of the fourth P-channel transistor to form a feedback path. ### Claim 6 (depends on 5) The circuit structure of claim 5, wherein the pulsed driver circuit further comprises: a third N-channel transistor coupled between the output of the pulsed driver circuit and the second inverter and gated by the first power high voltage; wherein the third N-channel transistor is substantially the same size as the first N-channel transistor in the AND logic circuit; and wherein the second inverter is substantially the same size as the first inverter in the AND logic circuit. ### Claim 7 (depends on 1) The circuit structure of claim 1, further comprising: an additional AND logic circuit operating at the second power high voltage, the additional AND logic circuit having a first input, a second input coupled to the output of the pulsed driver circuit, and an output, wherein: the first input of the additional AND logic circuit operates at the second power high voltage; and the output of the additional AND logic circuit operates at the second power high voltage. ### Claim 8 A circuit structure, comprising: a pulsed driver circuit operating at a first power high voltage, the pulsed driver circuit having an input operating at the first power high voltage and further having an output operating at the first power high voltage; and an AND logic circuit, the AND logic circuit comprising: a first N-channel transistor coupled between the output of the pulsed driver circuit and a first internal node, the first N-channel transistor having a gate coupled to a first input of the circuit structure; a first P-channel transistor coupled between the first internal node and a second power high voltage, the first P-channel transistor having a gate coupled to the first input of the circuit structure; a first inverter having an input coupled to the first internal node and an output coupled to a first output of the circuit structure, the first inverter being coupled to the second power high voltage; and a second P-channel transistor coupled between the first internal node and the second power high voltage, the second P-channel transistor being gated by the output of the first inverter. ### Claim 9 (depends on 8) The circuit structure of claim 8, wherein transistors in the AND logic circuit comprise thicker oxide than transistors in the pulsed driver circuit. ### Claim 10 (depends on 8) The circuit structure of claim 8, wherein the pulsed driver circuit comprises an inverting pulsed driver circuit. ### Claim 11 (depends on 8) The circuit structure of claim 8, wherein the pulsed driver circuit comprises: a second N-channel transistor coupled between the output of the pulsed driver circuit and a ground, the second N-channel transistor being gated by the input of the pulsed driver circuit; third and fourth P-channel transistors coupled in series between the output of the pulsed driver circuit and the first power high voltage, the third P-channel transistor being gated by the input of the pulsed driver circuit; and second and third inverters coupled in series between the output of the pulsed driver circuit and a gate of the fourth P-channel transistor to form a feedback path. ### Claim 12 (depends on 11) The circuit structure of claim 11, wherein the pulsed driver circuit further comprises: a third N-channel transistor coupled between the output of the pulsed driver circuit and the second inverter and gated by the first power high voltage; wherein the third N-channel transistor is substantially the same size as the first N-channel transistor in the AND logic circuit; and wherein the second inverter is substantially the same size as the first inverter in the AND logic circuit. ### Claim 13 (depends on 8) The circuit structure of claim 8, further comprising an additional AND logic circuit, the additional AND logic circuit comprising: a second N-channel transistor coupled between the output of the pulsed driver circuit and a second internal node, the second N-channel transistor having a gate coupled to a second input of the circuit structure; second power high voltage, the third P-channel transistor having a gate coupled to the second input of the circuit structure; a second inverter having an input coupled to the second internal node and an output coupled to a second output of the circuit structure, the second inverter being coupled to the second power high voltage; and a fourth P-channel transistor coupled between the second internal node and the second power high voltage, the fourth P-channel transistor being gated by the output of the second inverter. ### Claim 14 A circuit structure, comprising: a first N-channel transistor coupled between a second input of the circuit structure and an internal node, the first N-channel transistor having a gate coupled to a first input of the circuit structure; a first P-channel transistor coupled between the internal node and a second power high voltage, the first P-channel transistor having a gate coupled to the first input of the circuit structure; a first inverter having an input coupled to the internal node and an output coupled to an output of the circuit structure, the first inverter being coupled to the second power high voltage; and a second P-channel transistor coupled between the internal node and the second power high voltage, the second P-channel transistor being gated by the output of the first inverter, wherein: the first input of the circuit structure is coupled to receive an input signal operating at the second power high voltage; the second input of the circuit structure is coupled to receive an input signal operating at a first power high voltage; and the second power high voltage is higher than the first power high voltage. ### Claim 15 (depends on 14) The circuit structure of claim 14, wherein the input signal operating at the first power high voltage first assumes a predetermined value and then ceases to be driven from outside the circuit structure. ### Claim 16 (depends on 15) The circuit structure of claim 15, wherein the input signal operating at the first power high voltage is provided by a pulsed driver circuit operating at the first power high voltage. ### Claim 17 (depends on 15) The circuit structure of claim 15, wherein the predetermined value is a high value.