# US 7,745,929 B2 · Semiconductor device and method for producing the same > Agents: this data is available as JSON from the patentgrep API and MCP server — see https://patentgrep.com/llms.txt - Number: US 7,745,929 B2 - Document ID: US7745929B2 - Status: Granted - Kind: B2 - Application number: 11/565,189 - Filed: 2006-11-30 - Published: 2007-06-28 - Granted: 2010-06-29 - Earliest claimed: 2005-11-30 - Assignees: Infineon Technologies AG - Inventors: Ralf Otremba - Web page: https://patentgrep.com/patent/US7745929B2 ## CPC - H10W 70/481: {for devices being provided for in groups H10D8/00 - H10D48/00} - H10W 70/466: {Tape carriers or flat leads} - H10W 72/30: Die-attach connectors - H10W 72/07336: {Soldering or alloying} - H10W 72/074: {of anisotropic conductive adhesives} - H10W 72/07636: {Soldering or alloying} - H10W 72/07637: {using a polymer adhesive, e.g. an adhesive based on silicone or epoxy} - H10W 72/07652: {changes in structures or sizes} - H10W 72/07653: {changes in shapes} - H10W 72/325: {Die-attach connectors having a filler embedded in a matrix} - H10W 72/352: {comprising metals or metalloids, e.g. solders} - H10W 72/354: {comprising polymers} - H10W 72/627: {Multiple strap connectors having different structures or shapes} - H10W 72/652: {comprising metals or metalloids, e.g. silver} - H10W 72/926: {Multiple bond pads having different sizes} - H10W 74/00: Encapsulations, e.g. protective coatings - H10W 90/766: {between a chip and a stacked lead frame, conducting package substrate or heat sink} - H10W: GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10 ## Abstract A semiconductor device (1) has a semiconductor component (2), a first electrode (6) and a control electrode (7) being arranged on the top side (4). The semiconductor device (1) furthermore has a circuit carrier (3) having a chip island (9) and a plurality of flat conductors (10). The rear side (5) of the semiconductor component (2) is mounted on the chip island (9). The first electrode (6) is electrically connected to a first flat conductor (13) via a first contact clip (16) and the control electrode (7) is electrically connected to a control flat conductor (14) via the second contact clip (19). The upper surface (33) of the first contact clip (16) is at least partly arranged in a plane which is further away from the top side (4) of the semiconductor component (2) than the entire upper surface (34) of the second contact clip (19). ## Claims ### Claim 1 A semiconductor device comprising: a semiconductor component having a top side and a rear side, at least one first electrode and at least one control electrode being arranged on the top side and a second electrode being arranged on the rear side, a circuit carrier having a chip island and a plurality of flat conductors, the rear side of the semiconductor component being mounted on the chip island, at least one first contact clip having a first contact region and a second contact region, and the first electrode being electrically connected to a first flat conductor via the first contact clip, and at least one second contact clip having a first contact region and a second contact region, and the control electrode being electrically connected to a control flat conductor via the second contact clip, wherein an upper surface of the first contact clip is at least partly arranged in a plane which is further away from the top side of the semiconductor component than the entire upper surface of the second contact clip, and wherein the first contact region of the first contact clip is arranged on the first electrode and the first contact region of the second contact clip is arranged on the control electrode, a thickness a of the first contact region of the first contact clip, being greater than a thickness b of the first contact region of the second contact clip. ### Claim 2 (depends on 1) The semiconductor device according to claim 1, wherein the semiconductor device furthermore comprises a plastic housing composition, the upper surface of the first contact clip being at least partly free of the plastic housing composition, and the upper surface of the second contact clip being encapsulated by the plastic housing composition. ### Claim 3 (depends on 1) The semiconductor device according to claim 1, wherein the first contact region of the first contact clip is arranged on the first electrode and the first contact region of the second contact clip is arranged on the control electrode, a height c of the first contact region of the first contact clip being greater than a height d of the first contact region of the second contact clip. ### Claim 4 A semiconductor device comprising: a semiconductor component having a top side and a rear side, at least one first electrode and at least one control electrode being arranged on the top side and a second electrode being arranged on the rear side, a circuit carrier having a chip island and a plurality of flat conductors, the rear side of the semiconductor component being mounted on the chip island, at least one first contact clip having a first contact region and a second contact region, and the first electrode being electrically connected to a first flat conductor via the first contact clip, and at least one second contact clip having a first contact region and a second contact region, and the control electrode being electrically connected to a control flat conductor via the second contact clip, wherein an upper surface of the first contact clip is at least partly arranged in a plane which is further away from the top side of the semiconductor component than the entire upper surface of the second contact clip, and wherein a thickness of the first contact region of the first contact clip and a thickness of the second contact region of the first contact clip are approximately identical, and a thickness of the first contact region of the second contact clip and a thickness of the second contact region of the second contact clip are approximately identical. ### Claim 5 (depends on 1) The semiconductor device according to claim 1, wherein the first contact clip comprises a first leg portion, a second leg portion and a plate portion extending between the first leg portion and the second leg portion, wherein the first leg portion provides the first contact region and the second leg portion provides the second contact portion. ### Claim 6 (depends on 5) The semiconductor device according to claim 5, wherein the first leg portion and the second leg portion comprise a thickness a. ### Claim 7 (depends on 5) The semiconductor device according to claim 5, wherein the first contact clip comprises a metal foil. ### Claim 8 (depends on 1) The semiconductor device according to claim 1, wherein the second contact clip comprises a first leg portion, a second leg portion and a plate portion extending between the first leg portion and the second leg portion, wherein the first leg portion provides the first contact region and the second leg portion provides the second contact portion, wherein the first leg portion and the second leg portion comprise a thickness b. ### Claim 9 (depends on 8) The semiconductor device according to claim 8, wherein the second contact clip comprises a metal foil. ### Claim 10 (depends on 1) The semiconductor device according to claim 1, wherein the semiconductor device furthermore comprises a plastic housing composition, and wherein a lower side of the chip island and lower sides of the flat conductors are free of the plastic housing composition. ### Claim 11 (depends on 1) The semiconductor device according to claim 1, wherein the first contact clip is electrically connected to at least one of the first electrode and the first flat conductor by means of soft solder, diffusion solder, or an electrically conductive adhesive. ### Claim 12 (depends on 1) The semiconductor device according to claim 1, wherein the second contact clip is electrically connected to at least one of the control electrode and the control flat conductor by means of soft solder, diffusion solder, or an electrically conductive adhesive. ### Claim 13 (depends on 1) The semiconductor device according to claim 1, wherein the semiconductor component is a vertical power semiconductor component. ### Claim 14 (depends on 13) The semiconductor device according to claim 13, wherein the vertical power semiconductor component is a MOSFET, an IGBT or a BJT. ### Claim 15 (depends on 13) The semiconductor device according to claim 13, wherein the vertical power semiconductor component is an n-channel MOSFET. ### Claim 16 (depends on 1) The semiconductor device according to claim 1, wherein the semiconductor device comprises a housing that is one of an SO8 housing, a TO252 housing, a PowerSO housing, a PowerQFN housing, a VQFN housing, a TO3 Housing, or a TO220 housing. ### Claim 17 A semiconductor device, comprising: a semiconductor component having a first side and a second side, a first electrode and a control electrode being arranged on the first side and a second electrode being arranged on the second side; a circuit carrier having a chip island, a first flat conductor, and a second flat conductor, the second side of the semiconductor component being disposed on the chip island; a first contact clip having a first contact region and a second contact region, the first electrode being electrically connected to the first flat conductor via the first contact clip; and a second contact clip having a first contact region and a second contact region, the control electrode being electrically connected to the second flat conductor via the second contact clip, wherein a surface of the first contact clip is at least partly arranged in a plane that is further away from the first side of the semiconductor component than an entire surface of the second contact clip, and wherein the first contact region of the first contact clip is arranged on the first electrode and the first contact region of the second contact clip is arranged on the control electrode, a thickness of the first contact region of the first contact clip being greater than a thickness of the first contact region of the second contact clip. ### Claim 18 (depends on 17) The semiconductor device according to claim 17, wherein the semiconductor device further comprises a plastic housing composition, the surface of the first contact clip being at least partly free of the plastic housing composition, and the surface of the second contact clip being encapsulated by the plastic housing composition. ### Claim 19 (depends on 17) The semiconductor device according to claim 17, wherein the first contact region of the first contact clip is arranged on the first electrode and the first contact region of the second contact clip is arranged on the control electrode, a height of the first contact region of the first contact clip being greater than a height of the first contact region of the second contact clip. ### Claim 20 (depends on 17) The semiconductor device according to claim 17, wherein the first contact clip comprises a first leg portion, a second leg portion and a plate portion extending between the first leg portion and the second leg portion, wherein the first leg portion provides the first contact region and the second leg portion provides the second contact portion. ### Claim 21 (depends on 20) The semiconductor device according to claim 20, wherein the first leg portion and the second leg portion comprise a same thickness as a thickness of the first contact region of the second contact clip. ### Claim 22 (depends on 17) The semiconductor device according to claim 17, wherein the first contact clip comprises a metal foil. ### Claim 23 (depends on 17) The semiconductor device according to claim 17, wherein the first contact clip is electrically connected to at least one of the first electrode and the first flat conductor. ### Claim 24 (depends on 17) The semiconductor device according to claim 17, wherein the second contact clip is electrically connected to at least one of the control electrode and the control flat conductor. ### Claim 25 (depends on 17) The semiconductor device according to claim 17, wherein the semiconductor component is a vertical power semiconductor component.