# US 7,745,925 B2 · Multi-functional metal shield case and method for making the same > Agents: this data is available as JSON from the patentgrep API and MCP server — see https://patentgrep.com/llms.txt - Number: US 7,745,925 B2 - Document ID: US7745925B2 - Status: Granted - Kind: B2 - Application number: 11/438,039 - Filed: 2006-05-19 - Published: 2006-10-05 - Granted: 2010-06-29 - Earliest claimed: 2003-11-19 - Assignees: Joinset Co., Ltd. - Inventors: Sun-Ki Kim - Web page: https://patentgrep.com/patent/US7745925B2 ## CPC - H05K 9/0026: {integrally formed from metal sheet} - H05K: PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS ## Abstract A multi-functional metal shield case and a method for making the same are provided. The multi-functional metal shield case includes a metal main body and an electrically non-conductive and heat conductive silicon layer. The metal main body includes a base and sidewalls integrally bent along edges of the base, and the electrically non-conductive and heat conductive silicon layer is formed on inner sides of the base and the sidewalls. Accordingly, heat can be rapidly transferred to the metal main body and emitted to an outside. Since the heat conductive silicon layer is non-conductive, an electric shock does not occur between the electronic component and the metal shield case. Further, since the heat conductive silicon layer is in contact with the electronic component, heat can be transferred more rapidly. ## Claims ### Claim 1 A metal shield case for receiving and shielding an electronic device, comprising: a metal main body including a base and sidewalls formed with a metal plate, the sidewalls bent along edges of the base; and an electrically non-conductive and thermally conductive silicon layer disposed only on inner sides of the base and the sidewalls and to a predetermined thickness of generally uniform dimension while having a material receiving space in an inner area of the metal shield case for retaining an electronic device in the material receiving space such that heat in the electronic device received in the metal shield case can be readily transferred to the metal main body through the electrically non-conductive and thermally conductive silicon layer for emitting to outside. ### Claim 2 (depends on 1) The metal shield case of claim 1, further comprising at least one vent hole formed through the metal main body and the electrically non-conductive and thermally conductive silicon layer. ### Claim 3 (depends on 1) The metal shield case of claim 1, further comprising tips integrally protruding at ends of the sidewalls such that the tips can be inserted and fixed to a PCB, wherein the electrically non-conductive and thermally conductive silicon layer is disposed at regions except at or around the tips. ### Claim 4 (depends on 1) The metal shield case of claim 1, wherein the electrically non-conductive and thermally conductive silicon layer is directly in contact with the electronic device received in the metal shield case. ### Claim 5 A metal shield case for receiving and shielding an electronic device, comprising: a metal main body including a base and sidewalls formed with a metal plate, the sidewalls bent along edges of the base; an electromagnetic absorbing silicon layer disposed only on inner sides of the base and the sidewalls, the electromagnetic absorbing silicon layer having an electrically semiconductive property and a thermally conductive property; and an electrically non-conductive and thermally conductive silicon layer disposed on the electromagnetic absorbing silicon layer and to a predetermined thickness of generally uniform dimension while having a material receiving space in an inner area of the metal shield case for retaining an electronic device in the material receiving space such that heat in the electronic device received in the metal shield case can be readily transferred to the metal main body through the electrically non-conductive and thermally conductive silicon layer and the electromagnetic absorbing silicon layer for emitting to outside. ### Claim 6 (depends on 5) The metal shield case of claim 5, further comprising at least one vent hole formed through the metal main body, the electrically non-conductive and thermally conductive silicon layer, and the electromagnetic absorbing silicon layer. ### Claim 7 (depends on 5) The metal shield case of claim 5, further comprising tips integrally protruding at ends of the sidewalls such that the tips can be inserted and fixed to a PCB, wherein the electrically non-conductive and thermally conductive silicon layer and the electromagnetic absorbing silicon layer are disposed at regions except at or around the tips. ### Claim 8 (depends on 5) The metal shield case of claim 5, wherein the electrically non-conductive and thermally conductive silicon layer is directly in contact with the electronic device received in the metal shield case. ### Claim 9 A metal shield case for receiving and shielding an electronic device, comprising: a metal main body including a base and sidewalls formed with a metal plate, the sidewalls bent along edges of the base; and an electrically non-conductive and thermally conductive silicon layer disposed only on inner sides of the base and to a predetermined thickness while having a material receiving space in an inner area of the metal shield case for retaining an electronic device in the material receiving space such that heat in the electronic device received in the metal shield case can be readily transferred to the metal main body through the electrically non-conductive and thermally conductive silicon layer for emitting to outside. ### Claim 10 (depends on 9) The metal shield case of claim 9, further comprising at least one vent hole formed through the base and the electrically non-conductive and thermally conductive silicon layer. ### Claim 11 (depends on 9) The metal shield case of claim 9, further comprising tips integrally protruding at ends of the sidewalls such that the tips can be inserted and fixed to a PCB, wherein the electrically non-conductive and thermally conductive silicon layer is disposed at regions except at or around the tips. ### Claim 12 (depends on 9) The metal shield case of claim 9, wherein the electrically non-conductive and thermally conductive silicon layer is directly in contact with the electronic device received in the metal shield case. ### Claim 13 A metal shield case for receiving and shielding an electronic device, comprising: a metal main body including a base and sidewalls formed with a metal plate, the sidewalls bent along edges of the base; an electromagnetic absorbing silicon layer disposed only on inner sides of the base, the electromagnetic absorbing silicon layer having an electrically semiconductive property and a thermally conductive property; and an electrically non-conductive and thermally conductive silicon layer disposed on the electromagnetic absorbing silicon layer and to a predetermined thickness while having a material receiving space in an inner area of the metal shield case for retaining an electronic device in the material receiving space such that heat in the electronic device received in the metal shield case can be readily transferred to the metal main body through the electrically non-conductive and thermally conductive silicon layer and the electromagnetic absorbing silicon layer for emitting to outside. ### Claim 14 (depends on 13) The metal shield case of claim 13, further comprising at least one vent hole formed through the base, the electrically non-conductive and thermally conductive silicon layer, and the electromagnetic absorbing silicon layer. ### Claim 15 (depends on 1) The metal shield case of claim 1, wherein the electrically non-conductive and thermally conductive silicon layer is formed of a material composed with electrically non-conductive silicon mixed with electrically non-conductive and thermally conductive ceramic powder. ### Claim 16 (depends on 15) The metal shield case of claim 15, wherein the electrically non-conductive and thermally conductive ceramic powder is boron nitride or aluminum oxide. ### Claim 17 (depends on 5) The metal shield case of claim 5, wherein the electrically non-conductive and thermally conductive silicon layer is formed of a material composed with electrically non-conductive silicon mixed with electrically non-conductive and thermally conductive ceramic powder. ### Claim 18 (depends on 17) The metal shield case of claim 17, wherein the electrically non-conductive and thermally conductive ceramic powder is boron nitride or aluminum oxide. ### Claim 19 (depends on 5) The metal shield case of claim 5, wherein the electromagnetic absorbing silicon layer is formed of a material composed with electrically non-conductive silicon mixed with electromagnetic absorbing powder. ### Claim 20 (depends on 9) The metal shield case of claim 9, wherein the electrically non-conductive and thermally conductive silicon layer is formed of a material composed with electrically non-conductive silicon mixed with electrically non-conductive and thermally conductive ceramic powder. ### Claim 21 (depends on 13) The metal shield case of claim 13, wherein the electrically non-conductive and thermally conductive silicon layer is formed of a material composed with electrically non-conductive silicon mixed with electrically non-conductive and thermally conductive ceramic powder. ### Claim 22 (depends on 13) The metal shield case of claim 13, wherein the electromagnetic absorbing silicon layer is formed of a material composed with electrically non-conductive silicon mixed with electromagnetic absorbing powder.